Abinaya Krishnaraja Email and Phone Number
7+ years research experience in semiconductor device fabrication focusing on micro- and nano- electronics with specialization in III-V nanowire transistors. I have been associated with collaborative research projects both within the EU and Swedish consortiums.
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Patent Attorney, Junior AssociateRouse Sweden Jun 2023 - PresentMalmö, Skåne County, Sweden
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Co-Founder & CeoConserv Sverige Ab May 2022 - PresentMalmö, Skåne County, Sweden -
Doctoral StudentThe Faculty Of Engineering At Lund University, Lth Aug 2017 - May 2023Lund, SwedenWith the power constraints in the MOSFET technology, novel device concepts are needed for future electronics. Designing sustainable logic devices has been the primary motive of this thesis and low-power transistors for digital applications has been the specific stream of research this work is built upon. My work involved:• Fabrication and Characterization (Electrical, Cryogenic & Structural) of vertical III-V nanowire Tunnel FET and MOSFET. • Development of process schemes for complex device structures• Data Analysis and Charge transport analysis• Demonstrated the best performing sub-40mV/dec TunnelFETs• Demonstrated the best switching sub-80mV/dec III-V PMOS• Developed Reconfigurable single nanowire PMOS/nTFET hybrid11+ Peer-Reviewed Publications and International Conference abstracts4+ Manuscripts to Peer-reviewed Journals in writing50+ Citations4 H-indexFab skills: Spin Coating, Photolithography, Laser Lithography, Dry Etching (RIE), Wet Etching, Thermal Evaporation, Sputter, Atomic Layer Deposition (ALD), Plasma Enhanced Chemical Vapor Deposition (PECVD) Metrology Skills: Ellipsometry, Profilometry, Optical Microscopy, Scanning Electron Microscopy, Agilent B1500A Semiconductor Device Analyzer, Cryogenic data analysis, Low Frequency Noise measurements using Lock-in Amplifier & Pre-Amp -
Master ThesisDepartment Of Nanotechnology At Imtek Apr 2016 - Jul 2017Freiburg Area, GermanyTitle: Fabrication & Electrical Characterization of Nanoscale Field Effect Devices for NanobiosensingSensitivity and Response time of a Nanobiosensor depends solely on the device dimensions and the material properties. In a potentiometric approach,the surface charge sensitivity is the basis for nanobiosensor sensitivity. So all the results from material analysis should be evaluated with respect to it. The main idea of my thesis is to analyse ZnO and SnO2 for protein sensing. The tasks carried out are: • Study of the electronic transport properties, leakage effects and interface properties of atomic layer deposited (ALD) ZnO and Aluminium dioxide on Si and SiO2 substrates.• Fabrication of Nanostructured Field Effect Devices with ZnO Thin Films, ZnO Nanowalls and SnO2 Nanowires.• Electrical and Physical Characterization of the above devices.• Comparison of the different Nanostructures to choose the one with best sensitivity and settling time.All the above analysis focused on the application of the results to developing a biosensor that could detect Streptavidin-Biotin protein. Cleanroom processes used:• Photo Lithography• Laser Lithography• Atomic Layer Deposition• Reactive Ion Etching (RIE)• Wet Chemical Etching• Thermal EvaporatorMetrology used:• Scanning Electron Microscope• Optical Microscopy• Ellipsometry• Profilometry• Semiconductor Device AnalyzerElectrical Characterization:• Transfer Characteristics• Output Characteristics• High Frequency Capacitance Voltage Measurements• Hall measurements
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Research AssistantDepartment Of Nanotechnology At Imtek Jul 2015 - Mar 2016Freiburg Area, GermanyDesign of transistor like structures at NanoScale using CleWin and Micropattern generator. Cleanroom Processing of Nanoscale Devices which included the following responsibilities:• Spin Coating• Photo Lithography• Laser Lithography• Atomic Layer Deposition• Thermal Evaporation• Sputtering• RIE• Wet etching• Structural Characterization using SEM
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Research AssistantFraunhofer Institute For High Speed Dynamics Oct 2015 - Jul 2017Freiburg Area, GermanyTechnology Study and Performance Analysis of commercially available Inertial Measurement Units focusing mainly on the Gyroscope G-Sensitivity. Fault Tree and Failure Mode Analysis of Electronic Components for reliability studies.• Tools Used: Origin Pro, MS Access
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InternRobert Bosch Gmbh Apr 2015 - Jul 2015Hannover Area, GermanyImplemented video processing algorithms for ASIC prototypes at the Computer Vision Department of Robert Bosch Center for Research. I worked on hardware level coding of mathematical functions using CORDIC Algorithm.• Languages Used: VHDL and MATLAB -
Research AssistantFritz Heuttinger Chair Of Microelectronics At Imtek Aug 2014 - Dec 2014Freiburg Area, GermanyEvaluated the performance of analog circuits that function as Delta-Sigma Analog to Digital Converters. I conducted comprehensive simulations at transistor and post layout levels. If necessary the circuits were adapted in order to meet specifications.• Tool Used: Cadence Virtuoso
Abinaya Krishnaraja Skills
Abinaya Krishnaraja Education Details
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Nanoelectronics -
Microsystems Engineering -
Electronics And Communications Engineering -
Avila Convent Matriculation Higher Secondary SchoolHigh School
Frequently Asked Questions about Abinaya Krishnaraja
What company does Abinaya Krishnaraja work for?
Abinaya Krishnaraja works for Conserv Sverige Ab
What is Abinaya Krishnaraja's role at the current company?
Abinaya Krishnaraja's current role is Patent Attorney, Junior Associate at Rouse.
What schools did Abinaya Krishnaraja attend?
Abinaya Krishnaraja attended Lund University, The University Of Freiburg, Coimbatore Institute Of Technology, Avila Convent Matriculation Higher Secondary School.
What skills is Abinaya Krishnaraja known for?
Abinaya Krishnaraja has skills like Nanoelectronics, Nanobiotechnology, Biosensors, Thin Films, Semiconductor Process Technology, Clean Rooms, Spin Coating, Photolithography, Plasma Enhanced Chemical Vapor Deposition, Atomic Layer Deposition, Rie, Wet Chemical Etching.
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