As a TCAD Engineer at Nexperia in Manchester, UK, I specialize in the development and optimization of vertical power MOSFETs for automotive and power applications. I lead Designs of Experiments (DOEs) based on TCAD simulations, collaborate with the Process Integration team to resolve device‑level issues, and provide technical guidance across multiple RD projects to enhance device performance and reliability.Previously, during my Ph.D. research, I gained deep expertise in process integration and simulation of MOS devices, particularly LDMOS transistors. My work focused on improving their figure of merit and reliability, addressing critical degradation mechanisms such as hot carrier injection (HCI), bias temperature instability (BTI), time‑dependent dielectric breakdown (TDDB), and radiation effects like total ionizing dose (TID).This research was published in multiple papers and contributed to advancing the understanding of MOS device reliability.Looking ahead, I aim to leverage my experience in power device design and reliability testing to contribute to the development of next generation power devices, particularly focusing on SiC technologies. I am passionate about applying advances in EDA tools and material science to develop more efficient, reliable, and innovative devices that drive the future of semiconductor technology and microelectronics.
Listed skills include Solar Pv, Semiconductor Device, Photovoltaics, Research And Development, and 19 others.