Alexandra Koroleva Email & Phone Number

Grenoble, Fr

Grenoble, Auvergne-Rhône-Alpes, France

Work in collaboration between the TIMA and LMGP laboratoriesThesis project: Study and development of La2NiO4+δ (L2NO4) memristive devices for bio-inspired computing· Study of the combined filamentary and interfacial switching mechanism of MIEC-based memristive devices. Investigation of the impact of the oxygen content in L2NO4 films on the memristive properties of TiN/L2NO4/Pt devices. Development of BEOL-compatible L2NO4-based memristive devices.· Investigation of the potential behavior of TiN/L2NO4/Pt synapses in the spiking neural network (SNN) architecture using the BindsNet simulation tool based on unsupervised learning. · Circuit-level integration of the TiN/L2NO4/Pt cross-bar arrays. Development of the compact model of the devices for the SPICE-level simulations.

Collaboration with Dr. Stephan Menzel on the development of the compact model of the TiN/La2NiO4/Pt devices

Moscow, Moscow City, Russia

Working with the atomic layer deposition (ALD) group at the Center of Shared Facilities in Nanotechnology on optimization of resistive and ferroelectric memoriesResistive switching in transition metal oxides· Implementation of Ru ALD bottom electrode in the TaOx-based memristive structures. Development of the model of the electric field distribution based on the bottom electrode surface morphology. Investigation of the conductive filament formation in the areas of the local field enhancement using conductive atomic force microscopy (CAFM).· Investigation of the analog properties of non-filamentary volatile WOx/HfO2 bilayer memristive structures. Study of the influence of vacuum annealing on oxygen vacancy concentration in the WOx films using in situ X-ray photoelectron spectroscopy. Design of the CMOS-compatible 3D device with the ALD Ru vertical electrode for reservoir computing. Novel materials for FeRAM· Investigation of ferroelectricity in the ALD-grown Hf0.5Zr0.5O2 (HZO) films. Thorough studies of the influence of the annealing temperature on the retention properties of TiN/HZO/TiN structures. · Study of the impact of the electrode material (TiN and Ru) on the reliability of the fully ALD HZO-based ferroelectric capacitors. · Interface engineering for retention improvement in fully ALD TiN/HZO/TiN structures - the study of the impact of the TiO2 bottom interlayer thickness on the structural and electrical properties.

Moscow, Moscow City, Russia

Master thesis internship (3 days/week) in Electrophysical Measurements Laboratory· Investigation of capacitance switching in memristive structures based on LiNbO₃ with CoFeB inclusions. Impedance spectroscopy analysis of the impact of CoFeB nanoparticle concentration on the memristive properties. Development of the equivalent circuit model of filament formation in the nanoparticle-doped systems.

Moscow, Moscow City, Russia

Bachelor thesis internship (2 days/week) in 'Neuron' Resource Center· Investigation of the rats' brain activity in vivo using calcium imaging. Development of detailed protocols for microscope implantation, calcium event registration, and analysis of neural activity in the somatosensory cortex.

Doctor Of Philosophy - Phd, Nanotechnology

Master Of Science - Ms, Applied Math And Physics

Bachelor Of Science - Bs, Applied Math And Physics