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Amr Mohammed is listed as Design Engineer |Physical Design |PPA| Standard Cells benchmarking| Memory Technologies |Semiconductor Devices| Reliability Physics| Manufacturing based in San Jose, California, United States. AeroLeads shows a matched LinkedIn profile for Amr Mohammed.
Amr Mohammed previously worked as Staff Design Enablement Engineer (Standard Cells benchmarking and PPA optimization) at Intel Corporation and NVM Device Integration & Yield Engineer at Intel Corporation. Amr Mohammed holds Doctor Of Philosophy (Phd), Nanotechnology, 4.0/4.0 from Purdue University.
I focus on standard cell benchmarking and PPA optimization for groundbreaking technologies like Intel 18A GAA RibbonFET and Intel3. With a tool we developed, we're pushing the boundaries of technology maturity and exploring DTCO pathways to meet diverse product specifications.The collaboration with the technology development team is instrumental in evaluating and optimizing PPA to align with product needs. My expertise in SPICE and Monte Carlo analysis and a solid background in NVM device integration and yield engineering ensures that we continually advance Intel's competitive edge in the semiconductor industry.Skills:Programming & Scripting: C++(MPI, OpenMP), Python, JMP Script, MATLAB, Perl, Tcl, BashHDL: System Verilog, VerilogLab Experience: Electrical characterization (materials), CV/IV (transistors), Memory ATE (magnum V tester & computer-based bench testing), Thermal imagingCircuit Simulation & Layout Design: hSpice , VirtuosoRTL2GDS flow (via cadence-certificate): basic knowledge of xcelium, Genus, Innovus ,TempusBasic Static Timing Analysis (via cadence certificate)
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I am working on standard cell benchmarking for different intel technologies (Intel 18A GAA RibbonFET), Intel3..etc. We developed a python-based tool to generate hspice flows to evaluate std cell PPA (leakage power, Dynamic Power & Delay) for both combinational &sequential cells. it includes the capability to explore the impact of random variation via Monte.
Device Engineer at Intel Corporation leading research and development in order to develop industry-leading NAND Flash memory technology. The scope includes hands-on characterization, modeling of the observed NAND memory device/array characteristics, and engineering solutions to achieve the highest level of NAND memory component performance, quality, and.
Performing a variety of technical duties required for process development, detecting and resolving non-routine equipment or process errors, and ensuring product quality. Proficiency using SPC, PCSA, DOE, and JMP. Qualify new platforms needed for ramping factory capacity and technology-driven process change with the goal of product yield improvement and.
Lafayette, Indiana Area
My doctoral dissertation is about developing a new model to study the non-diffusive thermal transport. We developed truncated Lévy model to interpret the quasi-ballistic thermal response experimentally observed by time domain thermoreflectance method (TDTR).The model leads to improved thermal characterization of nanoscale devices and material interfaces.By.
Oak Ridge, TN
Characterization of the thermoelectric/thermal properties of Tin Selenide (SnSe) for different crystal orientations using ZEM3 system and laser flash method.
Activities and Societies: Vice-President of Egyptian Student Association at PurdueAdvisor : Prof. Ali Shakouri
Modeling of Dark Current in Quantum Dot Infrared Photodetectors
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Amr Mohammed is listed as Design Engineer |Physical Design |PPA| Standard Cells benchmarking| Memory Technologies |Semiconductor Devices| Reliability Physics| Manufacturing.
Amr Mohammed is based in San Jose, California, United States.
Amr Mohammed has worked for Intel Corporation, Purdue University, Birck Nanotechnology Center, Oak Ridge National Laboratory, and Uc Santa Cruz.
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Amr Mohammed holds Doctor Of Philosophy (Phd), Nanotechnology, 4.0/4.0 from Purdue University.
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