Amr Mohammed Email & Phone Number

I am working on standard cell benchmarking for different intel technologies (Intel 18A GAA RibbonFET), Intel3 ..etc. We developed a python-based tool to generate hspice flows to evaluate std cell PPA (leakage power, Dynamic Power & Delay) for both combinational &sequential cells. it includes the capability to explore the impact of random variation via Monte Carlo as well as Vt targetting. using this tool, we evaluate technology maturity across PDKs and we also explore pathways (DTCO) for PPA optimization to fit diverse products specs in collaboration with the technology development team.

Device Engineer at Intel Corporation leading research and development in order to develop industry-leading NAND Flash memory technology. The scope includes hands-on characterization, modeling of the observed NAND memory device/array characteristics, and engineering solutions to achieve the highest level of NAND memory component performance, quality, and reliability. Key achievements: (1) I have developed high-endurance SLC as a cache for first 5bit/cell NAND. product has been qualified. we published the work in ISSCC'23/IEEE SSC-Letters (2)I have co-authored one conference paper (Intel conference for Advanced Analytics) on the use of machine learning for corner-case reliability testingCareer development skills: I attended the Talent Keepers leadership program (four month offered by Intel) to leverage leadership skills.

Performing a variety of technical duties required for process development, detecting and resolving non-routine equipment or process errors, and ensuring product quality. Proficiency using SPC, PCSA, DOE, and JMP. Qualify new platforms needed for ramping factory capacity and technology-driven process change with the goal of product yield improvement and cost reduction. Led task force meetings with vendors for defect reduction on newly-qualified platforms.

Lafayette, Indiana Area

My doctoral dissertation is about developing a new model to study the non-diffusive thermal transport. We developed truncated Lévy model to interpret the quasi-ballistic thermal response experimentally observed by time domain thermoreflectance method (TDTR).The model leads to improved thermal characterization of nanoscale devices and material interfaces.By analogy to engineering superdiffusion in light (Lévy glass), we have used the nanoparticles embedded semiconductors with varying concentration to study the impact of nanoparticles on the superdiffusive thermal transport. In addition, I have worked on a project to study the self-heating of hybrid graphene -silver nanowires network (used as transparent conducting electrodes) using thermoreflectance imaging. In this project, I developed a statistical analysis framework to analyze the temperature distribution of nanoscale networks with interesting insights on the non-linear percolation theory and reliability physics of nanoscale networks.

Oak Ridge, Tn

Characterization of the thermoelectric/thermal properties of Tin Selenide (SnSe) for different crystal orientations using ZEM3 system and laser flash method.

Cairo Governorate, Egypt

Doctor Of Philosophy (Phd), Nanotechnology, 4.0/4.0

Activities and Societies: Vice-President of Egyptian Student Association at PurdueAdvisor : Prof. Ali Shakouri

Master Of Science (M.Sc.), Engineering Physics, 3.90/4.0

Modeling of Dark Current in Quantum Dot Infrared Photodetectors

Bachelor Of Applied Science (Basc), Electrical, Electronics And Communications Engineering, 90.75/100