Andrew Edwards Email & Phone Number

Device engineer with experience in development and production of power and RF/microwave wide bandgap devices. Example production products include:- Novel AlGaN/GaN-on-Si normally-off HEMT.- High voltage GaN-on-GaN transistors used for prototype applications, and sampled to customers.- High voltage GaN-on-GaN PN diodes used for reliability evaluations, and sampled to customers.- Medium voltage GaN-on-Si transistor transferred to high volume manufacturing for Class D audio application.- RF GaN-on-Si transistor manufactured for cable TV line amplifier application.- High volume high-rel Si power diodes and modulesTechnologies developed:Power GaN MISHEMT, GaN PN Diodes, Schottky Diodes, Merged PN-Schottky Diodes, Power GaN JFET, High Reliability Silicon P-i-N Diodes, Schottky Diodes, multichip diodes, modules.Microwave/RF GaN HEMT, Monolithic Microwave Integrated CircuitsExtensive test and characterization:HP4145, curvetracer, SMU, C-V, pulsed I-V, load pull, s-parameter, hot/cold chuck, autoproberLayout experience:Cadence Virtuoso, Layout EditorInterpretation of Failure Analysis:SIMS, FIB/TEM, EDAX, EMMI, SEM, XIVASimulation and Modeling:Excel, TCAD (Silvaco and Synopsys), Multiphysics FEA (Thermal), Spice, ADS, Microwave Office, 1D Poisson/SchrodingerHands on experience with a wide variety of semiconductor processing techniques including:e-beam evaporation, ICP etch, RIE etch, ion implantation, RTA, sputtering, furnace anneal, PECVD, wet etch, photolithography, LPCVD

Listed skills include Simulations, Jmp, Eda, Cadence, and 12 others.