Andy Hsu is the Founder/CEO of NEO Semiconductor, a company focused on 3D NAND flash memory and DRAM technologies. In 2018, the company made a breakthrough in the world's fastest 3D NAND flash memory architecture named X-NAND. The architecture was presented in Flash Memory Summit conference in 2020, and won the Best of Show Award for 'Most Innovative Flash Memory Startup'. In 2022, the company announced X-NAND Gen2 and new X-DRAM technology in Flash Memory Summit and won the Best of Show Award for 'Most Innovative Memory Technology'. In 2023, the company announced the world’s first 3D NAND-like DRAM technology called 3D X-DRAM. This innovation is aimed to propel DRAM from 2D into 3D era.Andy had more than 25 years of experience in semiconductor industry including position as VP of Engineering and lead of R&D and engineering teams to develop more than 60 products in various non-volatile memory fields. He is an inventor of more than 120 granted US patents. He did research and wrote a thesis about Artificial Neural Network in graduate school and earned an MS degree in Electrical, Computer, and System Engineering (ECSE) from Rensselaer Polytechnic Institute (RPI), NY. and a BS degree from National Cheng-Kung University in Taiwan.