Stepped down as the President after completion of 2-year term, and was elected as the Advisory Councilor for ECESA. ECESA intends of fostering scientific interactions and strengthen the career development of ECE students. It serves as a network for undergrad, grad students and post-docs within the ECE Department.

Doctoral Researcher at the Institute of Space and Defense Electronics (ISDE) under the supervision of Dr. Arthur Witulski.

Nominated by the Department Chair as a Member of the Vision Committee at the Electrical and Computer Engineering (ECE) Department for the year 2021-22.

President and Founder of ECE Student Association (ECESA). ECESA intends of fostering scientific interactions and strengthen the career development of ECE students. It serves as a network for undergrad, grad students and post-docs within the ECE Department.

Elected as the Academic Co-Chair at the Graduate Students' Council of Vanderbilt University for the Academic Year 2023-24.

Elected as the Public Relations Chair at the Graduate Students' Council of Vanderbilt University for the Academic Year 2022-23.

Archive Special Project Graduate Assistant for Summer (Jun - Aug) 2022.

Nominated by the Department Chair as the Departmental Representative for Electrical and Computer Engineering (ECE) Department at the Graduate Students' Council for the year 2021-22.

Elected as the Vice President of Internal Affairs at the Graduate Students' Council of Vanderbilt University for the Academic Year 2024-25.

Fall 2024: Participating in NASA’s Mission Concept Academy (MCA) as the Lead Systems Engineer of Team 4, developing concepts for a space mission, including completing deliverables for Phase A and B.

Summer 2024: Participated in NASA’s Lucy Student Pathway Accelerator and Competency Enabler (L’SPACE) Proposal Writing and Evaluation Experience (NPWEE) Academy and served as the scientist and researcher for a team proposal submitted to NASA.

- Modeling effects of terrestrial neutron irradiation on Silicon Carbide (SiC) power devices- Modeling ruggedness of SiC power devices near avalanche breakdown- Designing custom test definitions for Bias Temperature Instability (BTI) study on B1500 parameter analyzer

Graduate Researcher on SiC FETs at the UAlbany ECSL under the supervision of Dr. Mohammed Agamy.

Assisted Spring 2021 courses: The Hardware-Software Interface (IECE 233) Reconfigurable Computing (IECE 431/531)Assisted Fall 2020 courses: Introduction to Electrical and Computer Engineering (IECE 111) Introduction to Electronics (IECE 300) Power Electronics (IECE 402/502)Assisted Spring 2020 courses: The Hardware-Software Interface (IECE 233) Introduction to Electronics (IECE300)Assisted Fall 2019 courses: Introduction to Electrical and Computer Engineering (IECE 111) Introduction to Electronics (IECE 300)

Developer for Enterprise Solutions

Served as the Chairperson of Pravasana which is the Photography, Painting and Film-Making Club of Heritage Group of Institutions.

Elected as a Member of the Students' Council of Heritage Institute of Technology for the year 2014-15. Re-appointed at the post for the year 2015-16.

Summer Research Internship 2016 at New Jersey Institute of Technology as part of the Student Exchange Program from Heritage Institute of Technology, Kolkata. Project: Investigating the reliability of high-k gate dielectrics on germanium substrates for nanoscale CMOS devicesMentor: Dr. M.N.U. Bhuyian, Yiming DingAdviser: Prof. (Dr.) Durgamadhab MishraAbstract: In this work, we have investigated metal/HfxZr1-xO/Al2O3/Ge metal oxide semiconductor (MOS) capacitors with six different Zr/(Hf+Zr) content (0%, 25%, 33%, 50%, 75%, and 100%) in the dielectrics. The dielectrics were subjected to slot-plane-antenna plasma (SPAO) treatment during the deposition process and compared with the control HfO2 without any SPAO treatment. Capacitance voltage (C-V) and conductance voltage (G-V) characteristics were studied for all of the devices using a 4284A LCR meter and a cascade probe station. The equivalent oxide thickness (EOT), flat-band voltage (Vfb), interface state density (Dit), C-V hysteresis, and oxide trapped charge (Qtrapped) were estimated from the experimental results. Current voltage (I-V) characteristics were studied using the Probe Station and HP 4156B Semiconductor Parameter Analyzer to compare the leakage current densities (Jg) for various compositions of Zr.Final Credit (GPA) : 4.0 (out of 4.0)