Research Intern
Working on Ion beam etching in dependence on the ion incident angleDescription: - Investigated determination of the etching rate in dependence of the ion incident angle, complemented by its influence on the structure width and the edge profile, together with characterizations regarding wafer homogeneity.- AFM & SIMS used for basic characterizations of the IBE process-the influence on the resist removal (wet or dry) and the pattern quality addressed with the final aim to achieve defect free patterns, mainly to avoid metal fences, being caused by redepositions during the etching process on the photoresist sidewalls. Due to their metallic nature, they cannot be removed during the resist removal, but remain as narrow metallic walls around the microstructures.- In Research project it clarified whether small ion incident angles can prevent redepositions on the resist sidewalls & thus, give access for a direct pattern transfer from photoresist in metallic thin film systems, also for non-reactive etching processes that are required for patterning spintronic thin film systems.- While doing research I got to know about materials, techniques, methods, tools, and also work culture in Research Institute. Skills: Spintronics; Ion Beam (scia Mill 200); Thin Film Characterization; Clean Rooms; secondary ion mass spectrometry (SIMS); Atomic force microscopy (AFM)Material: Aluminium; Platinum Software: Origin; Gwyddion; Excel; PowerPoint
