Developing GaN HEMT device technology for high speed and high power applications. As a part of new product development group, major duties includes GaN devices & process development, device test, and data analysis. I generated the first Wavice 0.4 um GaN HEMT qualification report, including statistical analysis of PCM data.Recently, I am leading 0.3um devices qualification for 50V C-band application and 0.2um devices for X/Ku-band application.

Developing backside via process for high power GaN HEMT. As a part of device development team, major duties includes GaN HEMT device & process development, device test, and data analysis.I contributed to planning and winning various government projects for GaN HEMT devices and integrated passive devices with my team members.

AlGaAs/GaAs based HEMT & MMIC process development for mm-Wave application.