Benjamin Moser Email & Phone Number

Boise, Idaho, US

Durham, North Carolina, US

• Customer facing Project lead in EUV Source Workstream; lead coordinating and presenting weekly report-out meetings.
• Coordinate & collaborate across multiple EUV source functional groups to define and drive improvement and industrialization projects for EUV litho light source with appropriate business cases to support customer.
• Worked in teams across sites and functions to drive performance improvements; provided execution plans & test results with analysis and recommendations for needed design changes.
• Wrote/modified python and Matlab code that enabled faster ASMLs EUV light source performance diagnostics and improved failure mode diagnostics.
• Proactively engaged in best safety practices and encouraged others in achievement of safety and output goals.
• Supported and provided on the job training to new hires and peer engineers.

Malta, NY, US

• Designed and screened experiment results to analyze FinFET performance improvements by novel Contact implant schemes that significantly reduced contact resistance over 50%, a 2.1X reduction that improved device.
• Evaluated, developed and optimized new Plasma Ion Implant doping equipment applications and process integration schemes to maximize FinFET performance. Focus areas included evaluating PLAD (Plasma Implant Doping) for.
• Characterized novel and new implant processes, identifying yield limiting process/equipment defects sources; troubleshooting and correcting root cause and engaging vendor in equipment performance improvement actions..

Armonk, New York, NY, US

• Demonstrated 8% nFET FinFET transistor performance improvement from HOT extension implant. Increased transistor channel junction abruptness over EPI dopant out-diffusion alone. Showed HOT extension IMP retained full.
• Awarded IBM Eminence & Excellence Award on outstanding execution on Mattson Millios Flash mRTP beta; leading IBM’s evaluation & novel process development. Explored Flash Anneals at PDA (post dep anneal), ms-anneal at.
• Increase carbon implant throughput 50% with improved run-to-run setup stability and showed a 1.2 yr ROI with implant equipment & cycle time improvement characterizing benefits of switching carbon precursor gas (DMAIC.
• Engineered a pFET FinFET transistor with >2% ieff@ioff performance improvement by titanium Silicide contact resistance reduction with Cold Boron through Trench I/I.
• As Team Lead for IBM Ion Implant Development served as point of contact with industry IMPLANT vendors to explore and develop industry leading implant solutions or other implant technology enablements.
• Engineered and characterized FinFET System-on-Chip (SoC) multiple VT flavors enablement with gate WF modifying IMPs into pFET transistor 14nm FinFET RMG transistor gate stack. Showed gate WFM implants shifted pVt.

• Sr. Ion Implant Process Engineer for new Logic Fab in Austin, completed Korea to Austin process transfer after being selected to "Seed" in Samsung Korea main fab to learn Business Culture and implant process specifics.
• Coordinated with site managers, implant equipment engineers and tool vendors to complete process qualification start-up and ramp for Axcelis Paradigm XE, Varian VIISta HCP and Nissin EXCEED 3000AH implanters..
• Developed company 1st production use of new carbon precursor gas for carbon implants giving 50% increase in beam stability and significantly improved implanter uptime.
• Obtained fab change and control board approval from DOE results ( beam current, end - station vacuum and particles ) analysis and implementation and fan-out plans of process changes.

Santa Clara, California, US

• Led cross-module MOL process engineers team that reduced die defects though multiple projects. Team recognized with a department award. Lead team effort with weekly meeting tracking defect improvement projects that.
• Improved Varian medium current tool availability by 6% by shortening Indium source bake-out times to 10 min from 50 min by utilizing an oven to bake out Indium charged crucibles at 100°C for 48 hrs prior install in.
• Led xR80 module peers and other Intel factories in developing xR80 Plasma Flood filament control strategy, by setting new filament power limits to protect product and prevent reoccurrence of product loss.
• Identified implant driven parametric shifts by tracking product parametric data (CMOS Long/Short Channel Vt, Well Sheet resistance, Well Junction capacitance) comparing data by implanter Identified parametric rouge.
• Qualified Kokusai atmospheric furnace on 32 nm, Intel new process, managing the qualification, start-up, presenting of Qual White Papers, and on time equipment handoff to production while responsible for safety.
• Trained new implant representative to cross module team. Convened, chaired and helped revamp a more rigorous L4E tool certification that included an engineering panel interview after the peer review and setup the cert.

Dallas, TX, US

• Drive introduction and development of new and critical implantation technology in support of the OMAP and Sun Microsystems UltraSPARC III and IV products at TI. Activities involved large numbers of prototypes, process.
• Develop company 1st production use of indium. Qualified indium in 65 nm baseline flow at 2 logpoints, NMOS Threshold Voltage Implant (NMOS performance enhancement) and pre-amorphization implant (enables use of defect.
• Eliminated Varian E500 implant charging damage and scrap. Identified process sensitivity to platen grounding paths and high photoresist coverage. Qualified fab first use of active charge control at mid current.
• Worked with implant vendor factory to develop then test (Beta Site Program: install and evaluate) "industry first" VSEA VIISta810EHP Charge Monitor..

Geneva, Switzerland, CH

• Qualified process and production steps on new equipment installations, GSDE2(200), GSDHE, FusionGemini and MATTSON Aspen Etcher.
• Determined root cause of 8250 product yield loss, due to recent vendor switch to new style ESC (brown electro static chuck use) and historic lack of e-shower use on-site.
• Helped ST save 30% off 8250 e-shower upgrade price from joint vendor/ST yield loss testing and vendor negotiation.
• Worked with post implant ash Plasma Etcher vendor to determine root cause of high pressure (2.7 Torr) recipe “Plasma Extinguishing Events” on several new and old MATTSON Aspen Etchers
• Worked with Implanter vendor to Beta test and evaluate software patch to remedy “GSDE2(200) AMU readback drift outside of +/- 0.5 AMU”.
• Received ST Technical Publication Award for co-authoring ”Characterizing Nitrogen Implant Effects on 0.17um Gate Oxide Thickness Uniformity and Charge-to-Breakdown”

Beverly, MA, US

• Analyzed, identified and corrected process/equipment anomalies such as dose shifts, dose non-uniformity’s, reduced particle counts, improved gate oxide integrity, reduced implant channeling with applied implant (VHE.
• Performed process/equipment characterization projects with: Siemens/Infineon, Motorola, National Semiconductor, VTC, Cypress, STMicroelectronics, WhiteOak Semiconductor, Lucent. IMEC, FUJITSU, ELMOS, Texas Instruments.
• Worked with customers to develop test plans and OCAPs, (Out of Control Action Plans) identifying control variables and test methods.
• Help structure process DOE test matrices, collected data, analyzed and developed optimum recipe setups, i.e.; new Plasma Electron Flood (PEF-Xe) to minimize device charging during implant and maximize product yields.
• Developed new product documentation and practices: PEF-Xe beta test specifications and EATON PEF-Xe Best Methods & Practices document.
• Installed medium current 8200 Dose II upgrades and demonstrated process improvements.

• Analyzed production in-line test parametric data, process parametric trends (ohmic, gate and in-fab final test) to minimize frequency if not eliminate out of control causes, dequal tools and provided corrective action.
• Worked with product engineers to identify yield loss root cause, responding quickly to changing product needs, Idss control.
• Reported out of control parametric data, contact resistance (RC); break down voltage (Vbgd), device saturation current (Idss) using in-line parametric device testing data and knowledge of SPC, Physics, Electronics.
• Controlled GaAs MESFET gate wet etch process, continuously tracked process and equipment, adjusted gate recess times to re-center Idss currents in product engineer specs and maximize delivered yields.
• Maintained ohmic contact alloy process (2101 AG associates RTA), writing and updating process specifications, scheduling PMs and training operators.

Forchheim, DE

• SIEMENS MEDICAL SYSTEMS Iselin, NJ MRI FIELD SERVICE ENGINEER INSTRUCTOR Feb 1989 to Aug 1990
• Taught and developed MRI sub-systems classroom curricula.
• Lead students in equipment troubleshooting lab exercises. SIEMENS MEDICAL SYSTEMS Iselin, NJ MRI FIELD SERVICE ENGINEER Feb 1987 to Feb 1989
• Prestaged (factory final equipment test), installed, troubleshooting and circuit fine-tuning of SIEMENS Magnetic Resonance Imaging (MRI) in rapid manner; applying advanced RF and digital electronics training learned in.
• Saved Siemens $30,000 by improved inspection and sealing of Super Conducting Magnet LN2

Washington, DC, US

-Operated, maintained and repaired ship-board Mk 152 (UNIVAC 1219) Fire Control Computer complex and sub-systems as part of U.S. Navy's Mk 74 Guided Missile Fire Control System used to control the AN/SPG-51 radar system by which computed accurate flight guidance parameters for Standard Missile launch and target tracking.-Operated, maintained and repaired.

Ba, Physics

Ftm2, Adv. Electronics:: Missile Systems, Radar, Computers ...