III-nitride wide bandgap semiconductor based optoelectronic and power electronic devices:1. Development of contact optimization techniques for III-nitride semiconductors grown on sapphire andsingle crystal AlN substrate.2. Development of models to analyze the non-linear (ohmic) contacts to Al-rich n-AlGaN and p-GaNexhibiting Schottky barrier at the metal-semiconductor interface.3. Processing of III-nitride devices: expert in surface control and device processing techniques.4. Demonstrated surface leakage controlled Ni/GaN homogeneous barrier Schottky diode with excellent temperature stability.5. Demonstrated series of UV light emitting devices with nearly 100% IQE.

Dissertation: Atomic Layer Deposition (ALD) Enabled Techniques for Novel Memory Applications.1. Dielectric engineering for novel volatile and non-volatile memory applications.2. Demonstrated a proof-of-concept dual floating gate memory MOSFET capable of simultaneous non-volatile and volatile memory operation.3. Developed fundamental understanding of oxygen vacancy based memory operations in Resistive RAM (ReRAM) devices.4. Demonstrated synaptic RRAM capable of multi-state analog memory operation, brain inspired learning and forgetting operations.Advisers: Prof. Veena Misra and Prof. Paul Franzon,Department of Electrical Engineering, North Carolina State University.

This work was focused on understanding the NAND reliability concerns for future generation memories. 1. Worked with Intel-Micron joint development program team at Micron campus, Boise, Idaho.2. Flash memory reliability characteristics were performed with state-of-the-art measurement tools. to understand the charge retention behavior of NAND cells.3. Finally, models were developed relating the charge loss to different cell degradation mechanisms.

Thesis: Study of spintronic memory devices based on AMR, GMR and TMR.1. First interaction with nano-fabrication lab, spent a long time to learn VLSI processes such as cleaning, lithography, etching, deposition, characterization of devices etc.2. Studied the magnetization reversal in spintronic devices based on anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) effect. AMR and GMR devices were studied with numerical solvers, whereas TMR devices were fabricated and characterized. 3. Also studied the barrier height inhomogeneity in ferromagnetic metal–GaN Schottky diode.Adviser: Dr. Ashwin TulapurkarOther Committee Members: Dr. Swaroop Ganguly and Dr. Dipankar SahaDepartment of Electrical Engineering, Indian Institute of Technology Bombay.

The summer training consisted of analyzing spectral leakage in non-stationary signals and applying Non-linear apodization techniques to remove the spectral leakage. A new apodization algorithm was developed and tested successful for the Wigner distribution of a chirp-signal.Adviser: Dr.. Amit Kumar Mishra, Dept of ECE, IIT Guwahati.