Sr Member Of Technical Staff
Current* Process Integration and Device engineering as a Senior Member of Technical Staff• In charge of developing Power Discrete Device & Process, such as Split-Gate-Trench-MOS process with Deep Trench and Dual Poly for 40V to 100V applications. - 3 devices under development for 40V to 100V applications with China & USA customers• Successfully developed high voltage process based on 0.18um & 0.20um STI (Shallow Trench Isolation) & DTI (Deep Trench Isolation) process for Large-panel Driver-IC such as 18volt & 13.5volt & 9volt applications.- Developed 2.0um 18volt HV process with STI base for LDDI application- Developed 0.18um 18volt/ 13.5volt/ 9volt HV process with STI base for LDDI application- Developed 0.18um 18volt HV process with DTI base for LDDI application• In charge of technology transfer from other fab for 0.18um & 0.25um 18volts process and products, and successful yield demonstration.- Successfully transferred the 0.18um & 0.25um 18volt technology from other fab (in Taiwan), including mask generation, process flow integration with modified conditions, electrical analysis & matching, physical analysis, yield demonstration, and product qualification for mass production• Contributed and involved in High voltage technology transfer to other foundry fabs, such as 0.18um 32volts process & products- Transferred 0.18um 32volt process to Malaysia fab, and mass production- Transferred 0.18um 32volt process to China fab• Performed product development for small-DDI applications, such as 32volts & 21volts process with 0.15um & 0.18um STI logic process, production yielding upto 98%.- Developed various sDDI products for China & Taiwan customers and mass production• Developed mask reduction process for 0.13um & 0.18um 32volt process- Process integration, creating new mask generation rule, and electrical analysis for performance matching and comparable yielding in production
