Semiconductor material processing: thin film deposition (MBE, Plasma-asisted MOCVD, MOCVD, electron beam and thermal deposition, sputtering), plasma etching, optical and electron beam lithography, wet process;Measurement of various parameters of semiconductor materials and devices (electrical, optical and structural properties): X-ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy, Ellipsometry, Optical Spectroscopy, Cathodo- and Photoluminescence, Atomic Force Microscopy, Secondary Ion Mass Spectroscopy, Capacitance-Voltage Profile, Hall measurements, etc;Simulation of group III-nitride based heterostructures and devices with SiLENSe and BESST software (STR Group, Ltd.)Instrumentation for measurements of electrical and optical properties of semiconductor materials and devices (multimeters, oscilloscopes, RLC-meters, Curve Tracers, Generators, Power Suppliers, etc.) and design of automated test equipment based on these instruments with full computer control using RS-232/422/485 and GPIB interfaces High and ultra-high vacuum generation:vacuum pump systems( turbomolecular, ion, cryogenic, diffusion and rotary), vacuum hardware for semiconductor processing, vacuum measurement (different types of ion and Pirani gauges, quadruple mass-spectroscopy);Programming in LabVIEW, C++, Assembler, FORTRAN, Pascal;PC software: Word, Excel, Access, PowerPoint, AutoCAD, MathCAD, Origin, SigmaPlot.Specialties: Expertise in MBE and PA-MOCVD epitaxial growth of III-V and III-Nitrides materials.Hands-on experience with materials characterization.