Photovoltaic Device Physicist
Manchester, United Kingdom
Developed processes using solution based CIGS precursors to achieve scalable production and market competitive device performance and manufacturing costs• Contributed, massively, to the improvements of active area PCE of devices from 2-17%• Optimized CIGS stoichiometry using design of experiment (DOE) response surface design• Developed reactive anneal processes using a variety of gas and vapour sources • Analysed interactions between anneal atmosphere, material stoichiometry, as well as, a variety of pre-deposition and post-deposition conditions• Used XRD patterns to determine electrical contact morphology influence on crystallization of subsequently processed absorber layers • Increased Voc by an average of 0.03V using reactive thermal post deposition treatment (PDT) by performing a DOE central composite design evaluating thickness, temperature, and time• Constructed a screening design to evaluate processes on a collaborator’s pilot line finding most important process conditions for further optimization• Performed extensive SEM analysis, developing methods of quantifying absorber morphology allowing quantitative, instead of qualitative, data processing• Collected EQE of devices to determine band-gap and crystal qualities making templates for quick data analysis • Interacted with overseas industrial partners, giving weekly presentations that up-dated progress• Risk assessed, developed SOP, and maintained EH&S standard. Introduced LEAN principles in processes of my management