Develop and direct BluGlass packaging operations to world class high volume production.

Implement photonic solutions for advanced process control. Concerned with cermic process optimization and yield improvement. Principal advisor for electrically injected VCSEL array project with VIXAR.

Expert on III/V compund semiconductor materials, devices and processing.Successful entrepreneur with early stage, mid stage and exit experience.Researcher & inventor with numerous patents & publications.

Enterprise exit and late stage planning

Providing technical assistance and consultation to startups and small businesses with regard to technology evaluation, business plan development, funding sources and new opportunities.Actively seeking a new permanent position in the photonics, semiconductors, or related industries.

• Brought in to integrate epitaxy component of Thorlabs’ acquisition of Corning’s laser division to serve Thorlabs’ internal and OEM businesses. o Converted obsolete epitaxial growth systems into cash; refurbished and restarted one tool, achieving production of transferred QCL & VCSEL product within a year.• Supervised construction of new cleanroom facility for epitaxial growth and laser fabrication (~20,000 sq.ft.). • Recruited and directed professional staff in conducting crystal growth development and production of QCL, ICL, and diode lasers. Commissioned acquired Veeco and AIXTRON MOCVD tools for laser production. • Developed and implemented Thorlabs’ roadmap for operation of MBE and MOCVD tools including tool sales/upgrades, manufacturing SOPs, business plan, customer recruitment & negotiations, recruitment/hiring/management of professional staff, quality processes and documentation, and technical direction.• Established university and national lab collaborations.

• Co-founded Ahura Corporation, a venture-backed homeland security systems and photonic component manufacturer specializing in portable Raman and FTIR based chemical spectrometers. Company was acquired by Thermo Fisher Scientific in 2010 for $165M. o Implemented site selection, facility design/construction, company capitalization, and government regulatory compliance. • Provided oversight for facility start-up, development, and production of optoelectronic materials and devices of InP and GaAs based alloys with InGaAsP, AlGaAs, strained InGaAs and InGaAsN active regions by MOCVD technique.• Engaged in photonic materials business development via collaborations with university and industrial partners; contributed to proposal writing, administration, and reporting of government grant programs.• Designed and led construction of semiconductor growth and fabrication facilities at new Thermo Fisher’s Tewksbury site. • Developed process for high growth rate quantum cascade lasers (QCL) at 9.0 microns and for low cost GaAs x-ray detectors. • Liaised with state and local regulators for launching high hazard operation in Tewksbury while serving as member of team designing and supervising construction of the Thermo Fisher Scientific Center of Excellence for Handheld Instruments. o Presented to regulatory authorities and the public and managed redundant safety systems associated with this facility.

• Co-founded Ahura Corporation, a venture-backed homeland security systems and photonic component manufacturer specializing in portable Raman and FTIR based chemical spectrometers. Company was acquired by Thermo Fisher Scientific in 2010 for $165M. o Contributed to business plan development and execution, funding negotiations, corporate policy development, and due diligence for sale to Thermo Fisher Scientific. o Implemented site selection, facility design/construction, company capitalization, and government regulatory compliance. • Provided oversight for facility start-up, development, and production of optoelectronic materials and devices of InP and GaAs based alloys with InGaAsP, AlGaAs, strained InGaAs and InGaAsN active regions by MOCVD technique.• Engaged in photonic materials business development via collaborations with university and industrial partners; contributed to proposal writing, administration, and reporting of government grant programs.• Managed Ahura’s facility operations, safety, hazardous materials, and security programs. • Developed proprietary process for regrown AlGaAs distributed feedback lasers (DFB). • Developed process for high growth rate quantum cascade lasers (QCL) at 9.0 microns/hour and for low cost GaAs x-ray detectors. o Presented to regulatory authorities and the public and managed redundant safety systems associated with this facility.

• Acted as CoreTek’s primary interface to epitaxy and characterization operations within Nortel Networks with responsibilities in development of Nortel’s global wafer operations expansion and risk mitigation planning.• Built, staffed and managed epitaxial growth and characterization research department to provide material for high speed, high power, tunable, long-wavelength VCSEL lasers and other high performance active optoelectronic devices. o The main goal was development of a high powered, electrically injected VCSEL for telecommunication applications at 1.55 and 1.33 m. o Managed recruitment, supervision, review, and professional development of R&D staff, specification and purchase of equipment for MOCVD growth and materials characterization, and group quality administration. o Planned and implemented expansion of epitaxy capacity for large-scale manufacturing and extensive materials R&D including design and development of facilities and infrastructure, equipment specification and procurement, vendor negotiation, and operations budgeting and forecasting. • Reduced production time of primary VCSEL structure grown in -house from 6 hours to 45 minutes.• Set department technical direction for development of III-V materials in support of high-performance long wavelength device goals. Managed technical innovation, materials supply, epitaxy outsourcing administration and quality assurance. o Built and matured partnering relationships with several international suppliers, developed specifications, and negotiated supply agreements. o Developed technical interactions between group and university collaborators, such as Boston University Photonics Center, and Harvard Division of Engineering and Applied Sciences. o Designed ISO complaint quality characterization matrix for qualification of incoming epitaxial wafers for VCSEL production. o Developed/implemented wafer level database for division-wide implementation into processing, testing, and design.

Developed proprietary processes for direct wafer bonding of Si to InGaAs for fabrication of novel, high performance photodetectors (8 patents granted). Avalanche detectors fabricated from material bonded by this process exhibit world record low dark current, and defect free, near ideal crystallographic interfaces between Si and InGaAs. Project responsibilities included growth of III-V device structures, development of bonding procedures and equipment, documentation and patent submission. Principle investigator of Group III-V semiconductor materials and optoelectronic device structures grown by MOCVD technique. Responsible for all aspects including technical program direction, daily growth operations, data analysis; statistical quality system and program reporting of MOCVD research laboratories which included two AIXTRON and one Thomas Swan reactors. Activities included growth of InGaAsP, InGaAs, InAlAs and InAlAsP base epitaxy for mqw detectors and integrated 1.55 µm laser-modulator devices; mesa etch and overgrowth of 1.3 µm and 1.55 µm CMBH lasers; and wafer fusion bonding of Si and III/V wafers for novel optoelectronic devices. Developed and produced strained MQW epitaxial base material for 1.3 µm analog DFB laser products and transferred technology to business unit. Developed novel, patented growth technique for production of multi-quantum well lasers grown in business unit’s production AIXTRON & EMCORE MOCVD reactors resulting in significantly increased device performance and yield. Investigated fundamental properties of phase stability of compound semiconductor interfaces, and dopant incorporation and diffusion in compound heterostructures. Served as official consultant to Optoelectronics business unit for MOCVD growth process technology. Supervised several operators, mentored numerous junior research staff members, and supervised two undergraduate research students.

Responsible for procurement, turn on, and operation of MOCVD semiconductor materials research laboratory. Accomplishments include startup of EMCORE MOCVD reactor, growth, analysis and design of GaAs, AlGaAs, InP, InGaAs, InGaAsP, InAlAs and InGaP materials and device structures including HBTs, VCSE lasers, Bragg reflectors, injection lasers, detectors and solar cells. Researched diffusion of dopants in InP and InGaAs for HBT development. Design and set up of Class 100 clean room facilities for MOCVD research including all process, safety and analytical equipment. Supervise three graduate and two undergraduate students in research laboratory. Assisted in preparation of research grant proposals, NSF Center program site reviews, and program reports. Chairman of UT Center for Energy Studies Safety Committee (1990-1992)

Developed safety procedures and protocols to allow for the use of metalorganic chemical vapor deposition (MOCVD) process in a factory environment. Developed hetero-epitaxy techniques and grew the first AlGaAs/GaAs double heterostructure laser directly grown on Silicon to operate in a continuous wave (CW) mode. This was accomplished by investigating kinetics of nucleation layers and by development of dislocation blocking GaAs/GaAsP strained layer superlattice structures. Performed MOCVD growth, electrical, optical, and physical analysis of GaAs, AlGaAs, GaAsP, InP, and InGaAs. Design and set up of Class 100 clean room facility for MOCVD research. Researched and developed ultra high N-type doping of InP and InGaAs materials using tetraethyltin in order to allow use of MOCVD process for production of heterojunction bipolar transistors (previously demonstrated only by MBE technique). This led to the highest N-type doping achieved by MOCVD for InP and InGaAs. This work led directly to the highest gain bandwidth transistor reported for InGaAs/InP system at the time and also the first demonstration of an electrically pumped vertical cavity surface emitting laser in InGaAs/InP emitting at 1.55 µm.