Next generation logic deviceQuantum computing

Pathfinding and technology development of Si Photonics and Intel Memory Technology (Optane) products.

Epi Process Technology department- Process development of novel Epi layers for 5nm logic and beyond (GAA, nanowire nanosheet FinFET) and advanced memory technologies (VNAND, DRAM), including metrology development for such layers- EPI reactor product development, including tool matching procedures, repeatability and tunability optimization through hardware continuous improvement projects (CIP) - Technical interface with customers (major semiconductor manufacturers) for joint development projects (JDP) and technology development support and troubleshooting

ASM Corporate R&D department, located at the Imec research institute - Developed novel epitaxy and pre-clean processes for future technology nodes (10nm and beyond) with strong interactions with integration, device and metrology teams- Led Joint Development Program activities with Imec on advanced epitaxy layers for future logic and memory technologies- Contributed to cross-disciplinary projects on integration of novel materials and processes

- Optimized heteroepitaxial growth of III-V on Silicon, targeting low dislocation density- Conducted the epitaxial growth and optimization of of InGaAs HEMT on Silicon by MOCVD- Developed integrated wafer processes using Si CMOS and III-V devices- Responsible for troubleshooting and maintaining the MOCVD reactor in optimal working conditions

Silicon Nanowires for Photovoltaics:- CVD growth of silicon nanowire array with Al and Cu catalyst- Integration of silicon nanowire array with conformal radial junction into a working concept solar cellEarth-abundant dichalcogenide solar cells:- studied the secondary phases of CZTS material using Raman spectroscopytechnical skills acquired: CVD, UV and optical lithography, SEM, micro-Raman spectroscopy, XRD, TEM

Studied the passivation of GaAs and InGaAs interface with high-k oxides using MOS structures:- Interface trap density extraction by conductance method and CV measurements- Annealing experiments and their influence on interface trap densitiy

Investigated the chemical stability of lanthanum oxide using Fourier Transform Infrared FTIR spectroscopy