Millimeter-wave Phased-Array Transceiver ICs for 5G & SatelliteMillimeter-wave Radar SoCs for SensingRF and millimeter-wave PAs in Silicon & III-V Technologies (1-100 GHz)Wireless Powering

1. A 60-GHz outphasing transmitter in 40-nm CMOS - first application of outphasing technique at mm-Wave - 500-Mb/s 16QAM with 12.5dBm average output power and 15% average efficiency - 1st author: ISSCC 2012 (paper 9.5) and JSSC 2012 (vol. 47, no. 12) - supported by ST-Ericsson and European Catrene PANAMA project 2. A 60-GHz dual-mode Class AB power amplifier in 40-nm CMOS - first reported dual-mode PA at 60 GHz - 17dBm output power and 30.3% PAE in high-power mode and 12dBm and 21.6% in low-power mode - 1st author: ESSCIRC 2012 and JSSC 2013 (vol. 48, no. 10). - supported by ST-Ericsson and European Catrene PANAMA project3. An E-band power amplifier with broadband power combiner in 40-nm CMOS - first reported silicon-based PA that covers both 71-76 and 81-86 GHz bands with uniform performance - 20dBm output power and 20% PAE from 71 to 86 GHz. - 1st author: ISSCC 2014 (paper 14.1) and T-MTT 2015. - supported by Analog Device, Limerick, Ireland.4. An E-band transmitter with 4.5Gb/s 64-QAM and 14Gb/s 16-QAM in 40-nm CMOS. - 1st author: A-SSCC 2014 & JSSC 2015 (vol. 50, no. 11).5. Computer-Aided Design in Millimeter-wave Circuits. - 2nd author: 3 papers published in TCAD

A 94GHz Receiver Design for Imaging Radar in 0.13um SiGe BiCMOS- system definition and design the complete RX front-end, including LNA, mixer, TIA and passives- the single-ended neutralized LNA with common-collector output stage achieves 25-dB gain, 6.5-dB NF and 20-GHz BW- 2 conference papers- supported by MEMPHIS project

A 60GHz Beamforming Transmitter Design for Presence Detection Radar in SiGe 0.13um BiCMOS- link budget calculation based on a typical household environment.- propose a true-time-delay beam-former architecture realized by loaded transmission line. Develop the design methodologies for wideband active and passive circuits with constant group delay.- circuits design and layout, including true-time-delay module, active balun and power amplifier. A measured delay range of 16 ps and delay resolution of 1.1 ps are achieved.- 2 conference papers in ESSCIRC.- supported by EU-MEDEA+ project SIAM

A Non-Volatile Memory Design for Passive RFID Tags in 0.18um standard CMOS- design and layout the complete memory chip, including memory array, charge pump, sense amplifier and digital control circuits. Total power consumption is less than 1 μW;- 2 journal publications.