Growth of III-V Compound Semiconductor (GaAs, GaSb) Materials using Molecular Beam Epitaxy and their characterisation and application.

Research experience in synthesis of 2D colloidal semiconductor nanocrystals (quantum dots, nanoplatelets) and their characterization (structural, morphological, chemical and optical characterization) and used in optoelectronic devices like LED, LSC, and Lasing applications.

Transport Properties of SrRuO3 on SrTiO3; Anomalous Hall effect and quantum oscillations: Here, We investigate the transport properties of ferromagnetic thin film of SrRuO3 grown on SrTiO3 substrate by molecular beam epitaxy (MBE). We see extraordinary Hall effect (EHE) which changes sign near the curie temperature. Schubnikov–de Haas (SdHaas) oscillations are observed in Hall resistivity which reveal very low effective mass of charge carriers, indicating possible existence of Weyl fermions which may contribute to the electrical transport. Angle dependent SdHaas measurement indicates 2D nature of the Fermi surface. Magnetization measurements are presently carrying out to understand the origin of the observed EHE.

6 Plus years research experience in the field of III-V (GaSb, GaAs, and GaN) compound semiconductors materials. My research expertise lies in the growth of GaSb, GaAs and GaN epitaxial layers on semi-insulating gallium arsenide (GaAs) and Si substrate using molecular beam epitaxy (MBE) and MOCVD techniques and their characterization FESEM, HRXRD, TEM, AFM, XPS, PL, Raman spectroscopy and Hall measurements. Also I have been involved in the UHV instrumentation and troubleshooting. I have published over 10 articles in SCI journals and delivered many presentations at the national/international level.For further information, please contact me at stsh1486@gmail.com