Originally graduated in Electronic Engineering, I became deeply specialized in the epitaxial growth of III–nitride materials (GaN, AlGaN, InGaN, AlInN) by MOVPE, as well as the engineering and characterization of crystalline layers and optoelectronic devices such as LEDs and lasers.I have been working in this field for more than 10 years, conducting research in renowned Institutions such as OSRAM Opto Semiconductors and the Polish Academy of Sciences, as well as managing the epitaxy in the production process at the company TOP-GAN, a small but resourceful, vertically-integrated manufacturer of optoelectronic devices.I am well versed in various characterization techniques, such as AFM, XRD and ellipsometry, and I can do complex data analysis and statistics. I have also some deep knowledge of computer and system programming in various programming languages, ranging from Python to C++, which often proved useful in my work.In the workplace I work best in a well motivated team but I could often adapt to pursue specific objectives independently and reliably. I am always willing to share knowledge and opinions, but also to recognize mistakes and accept the others’ feedback. I easily develop enthusiasm for what I do, but I can also be very patient and determined when things get difficult.