I am the R&D Manager at Spin-Ion Technologies, based in Palaiseau, France. I earned my Ph.D. at the SPINTEC laboratory, CEA-Grenoble, where I focused on studying spin-transfer torque nano-oscillators and non-volatile memories (MRAM) based on magnetic tunnel junctions and spin valves. Throughout my academic experiences, I have gained extensive expertise in semiconductor technologies, including material deposition, optimization, characterization of magnetic multilayers, fabrications of magnetic sensors based on XMR effect. My research has explored the influence of oxygen vacancies in MgO insulating barriers and their impact on spin-transfer torque and electrical transport. I also worked on validating the concept of a novel spin polarization sensor based on spin valves and Schottky junctions, as well as studying and developing magnetic field sensors using MTJs, spin valves, and spin orbit torque (SOT). I currently lead the R&D at Spin-Ion Technologies, where we focus on enhancing the performance of spintronic devices such as MRAMs, magnetic field sensors, and chips for in-memory computing and neuromorphic algorithms, using ion irradiation and implantation.