Laser diode epitaxy and epitaxy design

Developed AlGaInAsP-based MOCVD process on AIXTRON 2600 G3 equipment for Solar Cells on 4 " GaAs and InP substrates. Acquired and started up used AIXTRON 2600 G3 machines. Demonstrated process's for a four junction solar cell with ~46% efficiency under concentrated illumination.

Developed Epitaxy Procedures for next generation thin Film AlGaInAsP solar cells by MOCVD using Thomas Swan CCS shower head reactor. Demonstrated and developed process for a single junction solar cell with ~28.8 % efficiency under one sun( world record for single junction/non concentrator ) . Lead Thomas Swan CCS reactor with world record performance from R&D to pilot production 24/5. Made mayor contribution to increase growth rates of GaAs base active layer to 110 micron/hour. Using this technique world record solar cells were grown with a complete growth time of less than 5 minutes!

Epitaxy of LED materials by InGaN MOCVD using AIXTROON HT G2 and G3 systems

Research, develop and maintain high power compound semiconductor laser structures and processes, using MO CVD. Expert in crystal growth. Analyze advanced nano structure characterization and device data and feed it back to process improvements, utilizing DOE and statistical tools. Interface with device engineers and scientist to realize new semiconductor structures. Specified, deployed and qualified metal organic chemical vapor deposition reactors. Implemented and optimized processes for the production of AlGaInP based high power laser structures and AlGaAs-based high power laser structures. Developed entire wafer level specification suit for all crystal growth activities at Spectra Physics. Researched and developed material growth for Semiconductor Absorptive Mirrors. Extensive Experience with Aixtron 2600 G3 and 2400 G2 reactors. Knowledge about laser device physics and testing. . Demonstrated and released 780 – 980 nm material with world record power, efficiency and reliability.

 Development and manufacturing engineering of epitaxial growth process for the production of InP based compound semiconductor laser for telecommunication applications, using MO CVD. Specified the installation and deployment of numerous MO CVD reactors. Experience with Aixtron 2400 G3 reactors and EMCORE D125 reactors. Clean room experience and development of wet chemical etching process. Epitaxial growth on non-planar structures and selective area growth for electro modulated 1550 nm telecommunication laser.

Conduct experiments and research activities in the field of compound semiconductor nano-structures, using advanced nano- characterization techniques. Expertise with Veeco Atomic Force Microscopy. Realized III-V semiconductor nano structures on V-grooved substrates.