Freddie Castillo Ii, Ph.D. Email and Phone Number

• Led an external processing team on a technically complex product development project by providing specialized process flows, coordinating efforts around available process technology, and efficiently managing project timelines and resources.• Directed continuous iterative improvement cycles with aggregated fabrication data driving production capability improvements organized into technical documentation and reports for both internal and external stakeholders.• Collaborated with multidisciplinary teams to generate detailed mask layouts using automated scripts, as needed, for semiconductor devices ensuring adherence to device design parameters and layout guidelines.• Partnered with product owners to define detailed test plans and strategies for VCSEL die characterization, including electrical, optical, and small-signal modulation testing, and generated comprehensive reports.

Developing novel Laser-EAM transmitter in several SBIRs granted by agencies such as the Department of Energy and NASA:• Designed critical device components analyzing optical confinement and transitions using JMP and Excel software. • Collaborated on device fabrication process development primarily focusing on process margins for critical optical components.• Analyzed a wide variety of issues during Laser-EAM device fabrication to maintain high outcome quality.• Conducted laser LIV and spectral characterization and examined modulator absorption capability resulting in proof of concept.Collaborated with IntelliEPI IR personnel to establish state-of-the-art materials processing and testing capabilities. for an STTR granted by the Army.Designed and fabricated holographic gratings on GaAs pilot wafers according to customer specifications using various software for analysis for N-Light.

• Instructed 220+ students introducing MOSFET and III-V devices such as HBT, HEMT, and LASER fabrication processes such as oxidation, photolithography, wet/dry etching, diffusion, metallization, and device characterization.

• Designed experiments for new stoichiometric, low temperature, PECVD dielectric nitride thin film process and supplemental chamber clean increasing overall device yield by 60% in a span of 3 months.• Improved holographic grating quality by implementing thin film coatings analyzed using TFCalc.• Characterized GaAs based DBR laser performance (LIV & spectral analysis) to identify fabrication problems and potential improvements.

Collaborated with AT&T Labs in identifying key components for implementation of network microburst analysis. As well as reversed engineered ASCOM TEMS Pocket Device to create potential of eliminating $5,000 cost per unit for thousands of deployed units.