Gary Patton Email & Phone Number

Scottsdale, Az, Us

Santa Clara, California, Us

Santa Clara, California, Us

Real Estate Development

Malta, Ny, Us

Responsible for developing GLOBALFOUNDRIES' differentiated process and packaging technologies and design enablement, building a world-class R&D team and culture, driving key customer engagements and promoting GLOBALFOUNDRIES in external industry forums through invited keynote and panel talks. Developed highly optimized and differentiated technologies thru Design-Technology Co-Optimization (DTCO) and strong collaboration with key customers. Drove 6X reduction in Design Enablement critical bug rates and 2X improvement in bu resolution time. 2017 recipient of the IEEE Frederick Philips Award for outstanding accomplishments in the management of research and development.

Management of IBM’s ~1600-person semiconductor research & development organization. Responsible for development of IBM’s entire portfolio of leading edge process and packaging technologies, design enablement, and the successful ramp of IBM's Server Processors & customer OEM ASICS products at industry-leading performance over multiple technology nodes. Responsibilities also include management and growth of IBM's extensive R&D alliance partnerships and growth of key customer engagements. Member of IBM’s Corporate Growth & Transformation Team (top 300 IBM executives) since 2007.

Responsible for the worldwide development, manufacturing, and profitability of $1B+ advanced magnetic heads and media for Hard Disk Drives. Managed successful integration of Hitachi and IBM head and media technology organizations following merger in January 2003. Restructured operations to improve profitability (PTI) 10pts and imprve execution on new product introductions. Developed San Jose site rezoning strategy with city to reduce site operating expenses. Excellent record achieved for San Jose site on environmental, safety, security, ISO compliance, and site personnel issues.

Drove "start up" business in IBM MIcroelectronics that became industry leader in RF technologies (e.g., SiGe HBT & RFSOI technologies). Increase revenue year-to-year despite industry downturn, increased profitability , and improved customer satisfaction (best customer survey scores in the division). Lead cross-functional team effort between business line, manufacturing, development, and finance to double gross profit %. Managed customer relationships, partnerships, and business negotiations.

Supported Senior VP responsible for IBM's Microelectronics, Storage, and Display Divisions.

Managed 24/7 manufacturing production organization. Responsible for all new technology piloting and early production supply commitments. Increased manufacturing line productivity 20%, improved cycle time performance from 15 days over plan to 10 days under plan, and met all supply commitments on logic and DRAM products.

Managed manufacturing engineering organization responsible for yield learning on all products, electrical and physical characterization, inline manufacturing defect analysis, and facility production and characterization information systems. Received IBM Division Award for yield accomplishments.

Drove successful qualification and technology transfer into volume manufacturing of 64Mb DRAM products. Achieved record yields at a DRAM technology qualification and received IBM Division Award and General Manager's Excellence Award for Leadership.

Managed Advanced SiGe BiCMOS technology development team. Technology became basis for IBM's leadership RF and Analog BiCMOS technology offerings.

Managed Advanced Bipolar/BiCMOS technology department and developed IBM's breakthrough SiGe Heterojunction Bipolar Transistor (HBT) Technology. Established world record for silicon transistor speed, tripling previous record, and resulting in articles in New York Times, Business Week, Scientific American, etc. SiGe HBT work featured at 2004 International Electron Device Meetings 50th Anniversary event as top innovation of 1987. Received IBM Outstanding Technical Achievement Award for development of SiGe HBT technology. Received IBM Research Division Award for leadership of Bipolar Technology Qualification Task Force.

Ph.D., Electrical Engineering

M.S., Electrical Engineering

B.S., Electrical Engineering