Haoran Li
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Haoran Li Email & Phone Number

RF Device Process Development and Integration Engineer at Qorvo, Inc.
Location: Hillsboro, Oregon, United States 5 work roles 3 schools
1 work email found @qorvo.com LinkedIn matched
✓ Verified August 2026 4 data sources Profile completeness 100%

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Work email h****@qorvo.com
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Current company
Role
RF Device Process Development and Integration Engineer
Location
Hillsboro, Oregon, United States
Company size

Who is Haoran Li? Overview

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Quick answer

Haoran Li is listed as RF Device Process Development and Integration Engineer at Qorvo, Inc., a with 4838 employees, based in Hillsboro, Oregon, United States. AeroLeads shows a work email signal at qorvo.com and a matched LinkedIn profile for Haoran Li.

Haoran Li previously worked as RF Device Process Development & Integration Engineer at Qorvo, Inc. and Postdoctoral Researcher at Uc Santa Barbara. Haoran Li holds Doctor Of Philosophy - Phd, Electrical And Electronics Engineering from Uc Santa Barbara.

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Email format at Qorvo, Inc.

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{first}.{last}@qorvo.com
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Profile bio

About Haoran Li

- 5 years of research experience in MOCVD of III-N materials- Design and epitaxy of GaN-based HEMT structures with the state-of-the-art RF high power performance- Providing 200+ epi in more than 10 projects with different collaborators, proven to be a good team player

Listed skills include Matlab, Latex, Materials Science, Labview, and 18 others.

Current workplace

Haoran Li's current company

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Qorvo, Inc.
Qorvo, Inc.
RF Device Process Development and Integration Engineer
greensboro, north carolina, united states
Website
Employees
4838
AeroLeads page
5 roles

Haoran Li work experience

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Rf Device Process Development And Integration Engineer

Hillsboro, Or, Us

Rf Device Process Development & Integration Engineer

Hillsboro, Or

Postdoctoral Researcher

Santa Barbara, California Area

Jul 2018 - Nov 2018

Graduate Student

Santa Barbara, California Area

Research into III-N materials grown by MOCVD.• Developed growth techniques for high-quality thick AlGaN films with high Al-compositions fully strained to GaN in GaN/AlGaN/GaN heterostructures.• Explored the impact of various growth conditions on the compositional, morphological and electrical properties of metal- and N-polar AlN films deposited by MOCVD, minimizing the unintentional Ga incorporation and improving the film quality. Epitaxy of (Al,In,Ga)N-based electronic devices by MOCVD.• Design and epitaxy of N-polar AlGaN/GaN HEMT structures for RF power electronic devices, based on which the state-of-the-art performance of 8 W/mm output power with associated power-added-efficiency of 27% was obtained. • Developed and optimized N-polar HEMT structures with GaN/InGaN composite channels leading to successful scaling down of channel thickness to 4 nm, largely increasing the lateral scalability of the devices.• Developed growth processes for N-polar III-N Hot Electron Transistors (HETs).• Developed Si-doped N-polar GaN contacts with a free carrier concentration of 2.2e20 cm-3.

Sep 2011 - Mar 2018

Undergraduate Student

Hangzhou, Zhejiang, China

Surface morphology reconstruction in interferometric measurements of aspheric lenses. • Developed a Matlab program to reconstruct the surface morphology from interference images using Algebraic Reconstruction Techniques (ART).• Explored several methods to eliminate the mounting error of the aspheric lens and developed a Matlab program to correct the mounting error by analyzing the interference images, simplifying the calibration process in the measurement. Prototype development of an infrared-based assistive device for visually-impaired people.

Sep 2007 - Jun 2011
Team & coworkers

Colleagues at Qorvo, Inc.

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3 education records

Haoran Li education

Doctor Of Philosophy - Phd, Electrical And Electronics Engineering

Advisor: Professor Umesh Mishra Dissertation title: New aspect in MOCVD of metal- and N-polar (Al,Ga)N and its device applications

Bachelor'S Degree, Optical Engineering

Activities and Societies: Red Cross Society in Zhejiang University

FAQ

Frequently asked questions about Haoran Li

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What company does Haoran Li work for?

Haoran Li works for Qorvo, Inc..

What is Haoran Li's role at Qorvo, Inc.?

Haoran Li is listed as RF Device Process Development and Integration Engineer at Qorvo, Inc..

What is Haoran Li's email address?

AeroLeads has found 1 work email signal at @qorvo.com for Haoran Li at Qorvo, Inc..

Where is Haoran Li based?

Haoran Li is based in Hillsboro, Oregon, United States while working with Qorvo, Inc..

What companies has Haoran Li worked for?

Haoran Li has worked for Qorvo, Inc., Uc Santa Barbara, and Zhejiang University.

Who are Haoran Li's colleagues at Qorvo, Inc.?

Haoran Li's colleagues at Qorvo, Inc. include Jk Lee, Matt Steindorf, Mba, Curtis Diggles, Shuang Fu, and Paul Hundt.

How can I contact Haoran Li?

You can use AeroLeads to view verified contact signals for Haoran Li at Qorvo, Inc., including work email, phone, and LinkedIn data when available.

What schools did Haoran Li attend?

Haoran Li holds Doctor Of Philosophy - Phd, Electrical And Electronics Engineering from Uc Santa Barbara.

What skills is Haoran Li known for?

Haoran Li is listed with skills including Matlab, Latex, Materials Science, Labview, Afm, Metal Organic Chemical Vapor Deposition, Nanotechnology, and Physics.

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