Electrical EngineeringAdvised by Professor H.-S Philip Wong and Professor Kwabena Boahen- Develop a device to discriminate pulse sequences for Dendrocentric Learning

3D DRAM interface trap density (Dit) characterization- IV, Hi-Lo CV, Conductance, and Charge pumping method- Planar and Floating body devices

GaN Power HEMTs for 650 V applicationsHigh Power Program, Analog Power & Specialty Technology Division (More than Moore)• Working on the research and development of enhancement mode GaN high electron mobility transistors (HEMTs) for 650 V power applications.• Development of next-generation (TSMC GaN E650V Generation-2) 6” GaN-on-Si HEMTs for mass production by considering aspects such as novel structure design, reliability, system performance, and yield.• 8-inch GaN on Si project for GaN 650V Gen3 power HEMTs.

•Devices Design: E650V GaN Power HEMTs, n-IGZO & p-SnO Thin Film Transistors, L-edit, KLayout•Devices Fabrication: Molecular Beam Epitaxy (MBE), Sputter, Spin Coater, Photolithography, Electron Beam Lithography (EBL), Electron Beam Thermal Evaporator, Chemical Vapor Deposition (CVD), RIE, ICP-RIE, Sol-gel Process•Devices Electronic Characteristics: Keysight B1505A, Keysight 4200, Keysight 2636A, DC (Transfer curve, Output characteristics, I off), CV (Cbd, Cgd, Cgg, Dit), Reliability (HTRB, HTGB, Drain TDDB, Gate TDSB, Gate Breakdown, Drain-Bulk Vertical Breakdown), System (Dynamic Rds, on, Dynamic Vth Shift, HTOL), TLM (Rs, Rc, ρc)•Material Analysis: SEM, TEM, XRD, XPS, PL, SIMS, EMMI, RHEED•Worked on the research and development of Multi-channel IGZO nanowires Thin Film Transistors. The nano-scale IGZO channel was conducted using electron beam lithography (EBL). With the novel design of the multi-channel structure, the devices’ mobility and positive gates bias stress stability can be improved.•The CMOS inverter composed of p-SnO and n-SnO2 was fabricated successfully on flexible substrate for wearable electronics applications.

Teaching Assistant, Electrical Engineering (EE): Undergraduate service class for EE students onlySupervisor: Dr. Chien-Mo Li, Department of Electrical Engineering• Led the undergraduate EE class in servicing junior high school students’ study in the church.

Department of Materials Science and Engineering: Advanced Engineering MathematicsSupervisor: Dr. Ing-Song Yu, Department of Materials Science and Engineering• Administered exam review sessions for students and troubleshot any student problem-solving questions.

Summer Research Assistant, Institute of Atomics and Molecular Science PI: Dr. Ching-Ming Wei, Institute of Atomics and Molecular Science• Worked on the Ab-initio random structure searching of small Gallium clusters by VASP.• Studied the magic numbers of Gallium clusters. Found the most stable structure of Ga clusters with particular number of atoms.