April 2010 - May 2011: Volume Install Support Engineer @ ASMLMay 2011 - Sept 2011: Jr. RF Application Engineer@ NXP

The PL RF Small Signal Development, located in Nijmegen, the Netherlands is responsible for design and development of RF MMIC’s and IC’s for multiple RF markets and applications. In the multimarket segment, NXP has an extensive portfolio of low noise amplifiers, gain blocks and power amplifiers covering RF and microwave frequencies. The Jr. RF application engineer supports the design-in at lead customers and works closely with the Product Marketing Manager and product development teams.

Contribute to the output of volume production and install organization of photolithography machines (ASML TWINSCAN NXT family). Troubleshooting on the wafer stage module during development, production and installation at the customer. Point out structural problems, analyze them and generate solutions, whenever necessary together with Production Engineering and/or Development & Engineering. Monitor quality and timing of problems and their implementations. Propose improvements on product and process.

Design of an ultra-low power time reference module for a Deep Brain Stimulation (DBS) device.The time reference is based on a quartz crystal. The main clock frequency is around 1 MHz. The other generated frequencies are at 10 kHz, 1 kHz, 0.1 Hz and one variable frequency with a frequency range of 100 kHz to 900 kHz. The overall architecture is optimized for power consumption. The building blocks in the architecture are: a frequency divider, a crystal oscillator and a Phase-Locked Loop (PLL). The circuits are designed in a 0.25 μm CMOS technology with a supply voltage of 2.5 V and a total power dissipation of < 10 μW.

Active Magnetic Bearing (AMB)