• Synthesis of monolayer graphene using thermal chemical vapor deposition (TCVD)• Fabrication of FET using 2-dimensional materials (Graphene, MoS2)• Semiconductor process and Device fabrication
주식회사 위트
-
연구소장주식회사 위트 Apr 2018 - Present경기도 수원시
-
Post-Doctoral ResearcherCenter For Integrated Nanostructure Physics, Sungkyunkwan University Sep 2013 - Jul 2017대한민국 경기도 수원• Photo-thermal response of graphene oxide for mid-IR detection - Fabrication of graphene device in suspended SiNx membrane by using photolithography, electron beam evaporator and reactive-ion etching. - Electrical properties measurement under mid-IR radiation - Analysis of physical mechanism for temperature dependent electrical conduction.• Fabrication and pressure-dependent heat transfer analysis of multilayer graphene device - Fabrication of multilayer… Show more • Photo-thermal response of graphene oxide for mid-IR detection - Fabrication of graphene device in suspended SiNx membrane by using photolithography, electron beam evaporator and reactive-ion etching. - Electrical properties measurement under mid-IR radiation - Analysis of physical mechanism for temperature dependent electrical conduction.• Fabrication and pressure-dependent heat transfer analysis of multilayer graphene device - Fabrication of multilayer device for Joule heating and heat transfer properties measurement. - Establishment of pressure-controlled vacuum system - Graphene-gas interface investigation of heat transfer - Analysis of heat transfer property in graphene device using simulation (Comsol Multiphysics).• Thermal conductivity measurement of 2-dimensional materials (Graphene, MoS2) - Fabrication of Au/SiO2/Si substrate with micro-scale cylindrical holes by using photolithography, electron beam evaporator and reactive-ion etching. - Measurement of suspended graphene and MoS2 thermal conductivity by laser point heating. - Analysis of heat transfer in suspended 2-dimensional material in substrate with micro-cavity (Comsol Multiphysics).• Observing metal-insulator transition (MIT) in multilayer MoS2 - Fabrication of FET using a ~5 nm thick multilayer MoS2 with four metal electrodes. - Measurement of temperature dependent conductivity for several back-gate biases and electric field dependent conductivity at low temperature. - Modelling and simulation of Joule effect for temperature distribution in multilayer MoS2 FET (Comsol Multiphysics). Show less
배정준 Education Details
-
Sungkyunkwan UniversityNanophysics -
Sungkyunkwan UniversityPhysics
Frequently Asked Questions about 배정준
What company does 배정준 work for?
배정준 works for 주식회사 위트
What is 배정준's role at the current company?
배정준's current role is siparium@gmail.com.
What schools did 배정준 attend?
배정준 attended Sungkyunkwan University, Sungkyunkwan University.
Not the 배정준 you were looking for?
Free Chrome Extension
Find emails, phones & company data instantly
Aero Online
Your AI prospecting assistant
Select data to include:
0 records × $0.02 per record
Download 750 million emails and 100 million phone numbers
Access emails and phone numbers of over 750 million business users. Instantly download verified profiles using 20+ filters, including location, job title, company, function, and industry.
Start your free trial