I am a lead unit process engineer for AI Hardware and Integration research at the IBM AI Hardware Center in Albany, NY. My current work focuses on phase-change memory (PCM) and resistive memory (RRAM) materials for inference and training. The materials and devices I've developed, with the collaboration of the world-wide IBM Research team, are now incorporated into IBM's first 300 mm multi-level PCM built on 14 nm CMOS for AI compute.In 2020, I achieved my goal of becoming an IBM Master Inventor. I am continuously innovating memristive materials and devices for low power AI compute while training new inventors.From 2018 to 2021, I led the ULVAC-IBM joint-development program in Albany and am currently a PI for the SUNY Polytechnic-IBM joint research project to assess new PCM materials.My prior work starting in May 2017 in Albany was concentrated on Middle-of-the-Line (MOL) material development for next generation silicide contacts and metal interconnects. Prior IBM research, I was a doctoral student at Purdue University. I fabricated inorganic nanoparticles via hot-injection for photovoltaic devices. For my PhD thesis, I developed nanoparticle organic to inorganic ligand exchange chemistries to control the properties of absorber films. I am well versed in XRD, Raman, FTIR, and energy-dispersive X-ray spectroscopy for characterization of nanomaterials as well as scanning electron microscopy for characterization of thin films. During my undergraduate internship as an materials research engineer for IBM, I synthesized organic fluorine-free photo acid generators for environmentally benign photoresist formulations. As an undergraduate at the University of Delaware, I was in charge of hydrothermal synthesis and characterization of bimetallic catalysts for a collaboration with the Mitsubishi Corporation. I have broad experience across many STEM fields and use these to continue to push the forefront of edge computing and AI.