Technical Lead and Program Manager for UV(A,C) and Display products development, from design, prototyping, to New Product Introduction (NPI) to mass manufacturing verification.

• Build Display system model for products design of RGB LEDs package for targeted color gamut and system efficiency.• Edgelit and Directlit Product development of new generation RGB LEDs package for high efficiency and high color gamut. • Analyzed coupling efficiency of Light Guide Plate and optimized LGP extraction features for brightness uniformity improvement by non-sequential ray tracing simulation• Statistical data analysis of backlight units for its brightness, brightness uniformity, and color (JMP)• Managed the working relationship with overseas CM for injection molding optics.

• Designed non-image secondary optics with limited footprint and high light extraction efficiency for LED wafer lever package.• Designed, deposited, and optimized thin film stack DBR mirror with conductive layer for high reflectivity• Analyzed ellipsometric date for thin film/thin film stack/epi structure characterization.• Simulated HB LEDs chips and high power white lamp package by ray tracing software: Tracepro, LightTools • Constructed and validated optical model of High Brightness vertical thin film, lateral, and flip chip LEDs. • Designed low cost secondary non-imaging optics for LED luminaire system to meet energy star requirements.• Improved Gan-on-Si LED chips and package efficiency by optical loss analysis and measurement• Resolved relationship between encapsulant gain and light extraction efficiency of lateral and vertical chips. • Characterized optical and electrical properties of R&D flip chip and Gan-on-Si vertical HB LED chips • Failure analysis for high power LEDs reliability (flip chip, thin film vertical Gan-on-Si chip)

Leader of LED design team and spectroscopy • Leaded and managed technical projects to achieve goal of LEDs efficiency improvement• Improved productivity and reduced costs by recovering PL mapper system• Designed innovative LED chip structures to improve current spreading and heat transfer• Delivered research for improvement of extraction efficiency and internal quantum efficiency (IQE) by simulations using LightTools and APSYS • I Statistically analyzed material and device characterization data (photometry, L-I-V, Hall, CV, PL, FTIR, AFM, SEM) as feedback to epi growth for detects reduction• Designed optical systems for spectroscopy, identified and purchased characterization facilities, built and sustained characterization lab

Participated in several projects for Deep UV Light Emitting Diodes (LEDs) development. Studied carrier lifetime and dynamics in wide bandgap semiconductors and other optoelectronic materials by time-resolved photoluminescence and light induced transient grating techniques.Theoretically modeled carrier dynamics and compared with experimental date to investigate fundamental physics processes in III-nitride.Discovered carrier localization and screening effects on carrier dynamics and quantum efficiency in quantum confined MQW strucutures.Determined internal electric fields in AlGaN MQWs experimentally and compared with theoretical calculations.Determined and optimized internal quantum efficiency of UV LED. Provided reports, problem identification, suggestions, and solutions for cooperated SET, Inc.Characterized and compared polar and non-polar GaN materials grown by HVPE. Provided reports, problem identification, suggestions, and solutions for cooperated SET, Inc.Developed and characterized novel UV LED on AlN bulk substrates with cooperated Crystal IS, Inc. Improved light extraction efficiency of deep UV LED by ray tracing simulations using LightTools. Simulated optoelectronic devices using APSYS/LASTIP/PICS3D.

ssisted and worked in the State Key Laboratory for Artificial Microstructure and Mesoscopic Physics.• Investigated nano-electronic transport propensities of Colossal Magnetoresistance (CMR) materials by Scanning Tunneling Spectroscopy (STS).• Characterized bio-nanostructure absorbed on novel metal surfaces by Scanning Tunneling Microscope • Characterized nano-structure (DDME) absorbed on graphite by STM.• Manipulated and characterized 1D absorbed nanostructure to validate Landau’s theorem by Ultra High Vacuum (UHV) STM.• Operated and maintained the complicated STM-LEED-AES combined UHV system.• Supervised and trained new students.