Product development, development and design of high-sensitive and ultra-low noise Silicon Photomultipliers. Data management, computer application support tracking SensL’s wafer and package-level performance. Technical performance measurement, development of efficient functional tests.

Project leader for development of high mobility aGIZO thin film transistors and integration into flexible circuit backplanes, enabling OLED displays on flexible circuits. Resulting mobility exceeded 20cm2/V/s, a hundred-fold improvement over pentacene-based predecessor, while retaining lifetime characteristics needed for demanding display applications.Technical lead for ORAMA FP7 integrated project, coordinating with partners to deliver OLED backplanes using low temperature processing compatible semiconductor materials.Characterization improvements for organic and inorganic flexible-substrate compatible thin film transistors, in particular dealing with hysteretic electrical characteristics of pentacene-based semiconductors.Simulation of electrical performance of non-uniform pentacene-based thin film transistors.

as NWO veni fellow (December 2006-April 2007)
:- developed controlled electromigration technique to control the formation of nanoscale source and drain electrodes for single molecule transistors. 
-investigation of interaction between light and nanoscale source-drain electrodes
-opto-electronics of molecular transistors

as Marie-Curie fellow (May 2004-April 2006):
Research on:
-Charge Density Wave tunnel junctions and constrictions
-single-molecule transistor based on thiol-capped oligomers