Mark Robson Email & Phone Number

Albany, New York, United States

Plasma etch process development for 2 through 28nm FEOL/ MOL applications.Cu plating and spin clean process engineering for 300mm manufacturing.

Development engineer for wet etch and cleans. Engineering lead for silicon cleans product line. Identified and implemented best practices for transitioning products from R&D to end user. Assembled and led a team that developed methods of reliability testing of new products and processes including shelf life predictions and marathon testing. Developed Processes of Record for wet etch and surface cleans products for silicon and other electronic materials and transferred them to customer sites in the US and Asia.

R&D engineer in Reactive Ion Etch (RIE) group in Semiconductor Unit Process Technology department at IBM T. J. Watson Research Center. Strong experience in plasma processing of materials using current and next-generation RIE techniques. Responsible for Middle of the Line (MOL) etch processes for 65, 45 and 32 nm technology. Developed etch Processes of Record for Back End of Line (BEOL) and MOL applications. Supported numerous logic and novel memory programs

Engineering Implementation Group, Blade Process Engineering:Dual role in the Treatment Group and Measurement and Modeling Group. Responsible for PVD (sputter deposition) process development. Supported and optimized existing processes and effected continuous improvement. Project manager for ultra low load hardness testing of deposited coatings.

B.S., Metallurgical Engineering Materials Science - Biomedical Engineering

Activities and Societies: Carnegie Mellon Hockey Team

Ph.D., Materials Engineering

Activities and Societies: UConn Cycling Team, TMS, MRS, ASM, SCCA, USA Cycling Dissertation title: Measurement of Dislocation Velocities.

M.S., Materials Science And Engineering

Activities and Societies: MRS, TMS, ASM, SCCA Thesis Title: Sputter Deposition of TiC and SiC Hybrid Coatings on Silicon Wafers

College Preparatory School