Matthew Laurent Email & Phone Number

Epitaxial growth of III-N and diamond materials, focusing on applications to high-power electronic devices. Managing the operations of a multi-reactor laboratory. Supervising graduate students in areas including epitaxy of polycrystalline diamond thin films, N-polar GaN-based transistors, and normally off GaN HEMTs.

Development of MOCVD growth processes for high power (>1 kV) transistors. Coordinated epitaxial growth efforts for achievement of ARPA-E SWITCHES milestones.

MOCVD growth of (Al,In)GaN alloys and heterostructures; material and device characterization. Applied novel device design principles for increasing efficiency of InGaN-based solar cells. Studied charge carrier transport in nitrides. Developed N-polar InAlN-based high electron mobility transistor MOCVD processes.

Developed a Monte Carlo software for modeling ion implantation into non-planar structures such as Fin-FETs and nanowires, which was based on SRIM (Stopping and Range of Ions in Matter).

Doctor Of Philosophy (Ph.D.), Electrical And Computer Engineering

Master Of Science (M.S.), Electrical And Computer Engineering

B.S., Applied Physics, Materials Science And Engineering

Activities and Societies: Sigma Pi Sigma Physics Honor SocietyGraduated Summa Cum Laude