Matthew Reason Email & Phone Number

Goleta, CA, US

I managed a team of ~12 direct reports, successfully developing next-generation nBn midwave infrared and dual-band infrared focal plane array technology and transitioning from initial concept phase to low-rate production.

I worked as part of an innovative R&D team that develops next-generation barrier infrared photodetectors and focalplane arrays. I design the molecular-beam epitaxy conditions for experimental growths and pilot production wafers, as well as manage the refurbishing and installation of a V100 MBE system.

I worked independently on several research projects related to molecular-beam epitaxy growth of Sb-based high-electron mobility transistors, including epitaxial regrowth, III-V growth on Silicon, and atomic layer deposition of oxides on III-V's, using a Riber 32-P MBE system.

I researched optical and electronic properties of dilute nitride (In)GaAsN alloys for solar cell applications. I was responsible for preventative and corrective maintenance on a Varian Modified GEN II MBE system, as well as training other graduate and undergraduate students.

Doctor Of Philosophy (Ph.D.), Materials Science And Engineering

Bachelor Of Arts (B.A.), Physics