Conducted advanced molecular beam epitaxy (MBE) growth of III-nitride devices and fabricated capacitor structures to test ferroelectric and piezoelectric properties. Work Veeco GenXplore MBE System:• Showed N-polar GaN QD heterostructures that can emit tunable amounts of UV-A, UV-B, and UV-C light, showing accurate control over growth.• Grew ScAlN-based high-electron-mobility transistor (HEMT) heterostructures and N polar AlGaN with low resistivity. Work on Veeco Gen 2 MBE System:• Engaged in CMOS-compatible, defect-free MBE growth of III-N and III-V multilayer heterostructures on Si (001) as part of DARPA’s M-STUDIO initiative, focusing on universal and diverse integration opportunities for material synthesis.

• I worked on research projects at the Micro/Nanoelectronics and Energy Laboratory under the supervision of Prof. Feng Zhao. • Fabricated and tested biomaterial-based memory (ReRAM) and artificial synaptic devices for neuromorphic computing applications.• Worked with an inter-departmental team to build a machine learning model to predict fabrication parameters based on tested device characteristics.• Worked with a mentor from Intel Lab to make an efficient graphical neural network (GNN) model to detect COVID patients from X-ray or CT scan images.