Michael Schuette Email & Phone Number

Lowell, Ma, Us

Durham, North Carolina, Us

Lead all aspects of government S&T program acquisition & execution for the world's leading supplier of gallium nitride on silicon carbide (GaN/SiC) technology. Primary interface to government, industry, academia with regards to contract activities.Thought Leadership• Interpret technology demands/trends garnered from S&T involvement to inform roadmaps• Advise leadership on technology landscape & competitive forces• Identify & justify pursuit of emerging adjacent market segmentsStakeholder Alignment• Engage business & technical leaders on technology strategy while creating pathways for outside resourcing • Develop internal business case while providing sponsors with transition projections to influence investment decisionsStrategic Partnerships• Engage companies, government labs, university groups on partnerships involving technology co-development, transfer, licensing, advising both in conjunction with & apart from govt projects• Negotiate agreements to enable collaboration while safeguarding business interestsBid/Proposal Management• Formalize Business Development processes• Direct solution architecture, modeling/sim, capability analysis to inform proposals• Form matrixed teams & oversee complex proposals through submission

Wright-Patterson Afb, Oh, Us

Principal Investigator (PI), subject matter expert (SME), contracting officer technical representative (COTR), & project engineer (PE) for basic & applied research activities involving RF & power semiconductor technologies including gallium nitride (GaN), zinc oxide (ZnO), indium phosphide (InP), & advanced packaging. Domain knowledge of electronic warfare (EW) & radar, with appreciation for role of components in performance, size, weight, power, & cost (SWaP-C) of phased-array antennas. Strategic Partnerships / Planning• Strategic planning within government/industry/academia initiatives, fostering partnerships & research collaborations• Interface with leadership & mission partners to align research portfolioProgram Formulation & Proposal Development• Lead/support winning white papers/proposals for internal and external funding opportunities• Conduct trade studies, technology assessments, & white-space mapping to identify gaps in sensor technology• Support broad agency announcement (BAA) development Team Leadership• Assemble & actively manage geographically dispersed research teams • Recruit & mentor/develop technical staff, provide performance feedbackTactical-Technical Translation / Interfacing• Capture/interpret requirements & flow down component measures of performance (MOPs)from user community• Build/support organizational roadmaps, applying unique insights to shape research vectorsContract / Intellectual Property (IP) Management• SME, COTR, & PE for ~$100M in DoD programs developing/leveraging microelectronics• Lead & support USAF invention disclosures to file patents, while safeguarding contractor IP• Advise team on publish vs. patent decisions to maximize ROITechnology Transition & Market Research• Facilitate transition of end-state & off-ramp program-derived technologies• Assess DIB supplier interest in developing or receiving emerging technology

Team Lead for in-house oxide thin-film transistor (TFT) & GaN HEMT research for transparent/flexible electronics & monolithic integration for enhancement/depletion (E/D)-mode power & logic circuits. Directed cleanroom microfabrication, test, analysis activities maintaining >4-wafer/month throughput. • Leveraged $.5M DARPA seedling funds, leading to figure-of-merit whitespace framework for ZnO TFTs• Assembled 8-person team, defined scope & schedule of 2-year project securing commitment of contractor & gov team• Demonstrated transistor topologies to maximize high-voltage & -frequency performance• Designed, procured, stood up one-of-a-kind power semiconductor test resource

Hillsboro, Or, Us

(TriQuint merged with RFMD to form Qorvo in 2015)Principal Investigator for $16M DARPA Nitride Electronics NeXt-Generation Technology (NEXT) program to create high-speed GaN transistor technology enabling high performance analog, RF, & mixed signal circuits for the DoD.Innovation• Led 10-person team to deliver – within production fab – world’s first E- & D-mode GaN transistors with current & power gain cutoff frequencies above 300 GHz on the same wafer • Defined next generation of millimeter-wave GaN technology by overseeing epitaxial/geometric device design, electrical testing/analysis, & developing novel manufacturing methods to minimize short-channel & parasitic effects • Coordinated subcontractor activities & prepared customer reports & briefingsCommercialization• Engaged design/applications team on commercialization – process modules later adapted for production offerings• Prepared & contributed to series of invention disclosures to underpin future product developmentTalent Development • Recruited research engineering staff & managed performance of junior team members

Doctor Of Philosophy - Phd, Electrical Engineering

Master Of Science - Ms, Electrical Engineering

Bachelor Of Science - Bs, Electrical Engineering