Michael Schuette Email & Phone Number

Lowell, MA, US

Durham, North Carolina, US

• Lead all aspects of government S&T program acquisition & execution for the world's leading supplier of gallium nitride on silicon carbide (GaN/SiC) technology. Primary interface to government, industry, academia with.
• Interpret technology demands/trends garnered from S&T involvement to inform roadmaps
• Advise leadership on technology landscape & competitive forces
• Identify & justify pursuit of emerging adjacent market segmentsStakeholder Alignment
• Engage business & technical leaders on technology strategy while creating pathways for outside resourcing
• Develop internal business case while providing sponsors with transition projections to influence investment decisionsStrategic Partnerships

Wright-Patterson AFB, OH, US

• Principal Investigator (PI), subject matter expert (SME), contracting officer technical representative (COTR), & project engineer (PE) for basic & applied research activities involving RF & power semiconductor.
• Strategic planning within government/industry/academia initiatives, fostering partnerships & research collaborations
• Interface with leadership & mission partners to align research portfolioProgram Formulation & Proposal Development
• Lead/support winning white papers/proposals for internal and external funding opportunities
• Conduct trade studies, technology assessments, & white-space mapping to identify gaps in sensor technology
• Support broad agency announcement (BAA) development Team Leadership

• Team Lead for in-house oxide thin-film transistor (TFT) & GaN HEMT research for transparent/flexible electronics & monolithic integration for enhancement/depletion (E/D)-mode power & logic circuits. Directed cleanroom.
• Leveraged $.5M DARPA seedling funds, leading to figure-of-merit whitespace framework for ZnO TFTs
• Assembled 8-person team, defined scope & schedule of 2-year project securing commitment of contractor & gov team
• Demonstrated transistor topologies to maximize high-voltage & -frequency performance
• Designed, procured, stood up one-of-a-kind power semiconductor test resource

Hillsboro, OR, US

• (TriQuint merged with RFMD to form Qorvo in 2015)Principal Investigator for $16M DARPA Nitride Electronics NeXt-Generation Technology (NEXT) program to create high-speed GaN transistor technology enabling high.
• Led 10-person team to deliver – within production fab – world’s first E- & D-mode GaN transistors with current & power gain cutoff frequencies above 300 GHz on the same wafer
• Defined next generation of millimeter-wave GaN technology by overseeing epitaxial/geometric device design, electrical testing/analysis, & developing novel manufacturing methods to minimize short-channel & parasitic.
• Coordinated subcontractor activities & prepared customer reports & briefingsCommercialization
• Engaged design/applications team on commercialization – process modules later adapted for production offerings
• Prepared & contributed to series of invention disclosures to underpin future product developmentTalent Development

Doctor Of Philosophy - Phd, Electrical Engineering

Master Of Science - Ms, Electrical Engineering

Bachelor Of Science - Bs, Electrical Engineering