Min Yang Email & Phone Number

Washington, Dc, Us

Min Yang, Ph.D., practices all aspects of patent law, including district court litigation, International Trade Commission (ITC) investigations, post-grant proceedings, patent prosecution, and client counseling. She represents clients in matters involving a wide variety of technologies, including those in the electrical and mechanical engineering spaces. She has substantial experience in patent cases directed to semiconductor devices and circuits, computer systems and software, automobiles, consumer electronics, telecommunications, and image/video processing.

Washington, Dc, Us

Min's work at Sterne Kessler involved post-grant review proceedings before the PTAB, as well as patent preparation and prosecution, prior art search and analysis to determine patentability, validity/invalidity, freedom-to-operate, and infringement. Min' served clients in matters in the area of nanotechnology, semiconductors, optical devices, automotive systems, electronics and circuits, communications, etc.

For over 18 years at IBM, Min conducted R&D for high-performance CMOS devices. She was the technical leader for 14nm FINFET technology transfer from research to 300mm fab. She led groups of engineers of process, device, patterning, lithography, circuit and testing, etc., and successfully delivered key milestone of functional SRAM. Min co-invented and developed hybrid orientation technology (HOT) using wafer bonding and selective epitaxy, and demonstrated highest performance for CMOS devices and ring-oscillators at the time. She also designed and fabricated extremely-thin silicon-on-oxide (ETSOI) MOSFETs with self-aligned back-gate, and explored III-V InGaAs/SiGe hybrid CMOS. Min pioneered silicon photonics (silicon waveguides/photonic switches and Ge photodetectors) with fully integrated monolithic CMOS technology, and fabricated fully functional 25 Gb/s silicon photonic transceivers at 90nm node. Min designed and fabricated high speed and low power silicon Lateral Trench Photodetector with fully integrated CMOS trans-impedance amplifier (TIA) at 130nm node.She started her career at IBM’s Microelectronic Division, first as a process integration engineer for 90nm vertical Dynamic Random Access Memory (DRAM) and then as an integration manager for 32nm embedded DRAM. She researched and developed novel phase-change memory with greatly reduced reset current and very tight set/reset distribution in fully switching 10x10 arrays.Min received 17 IBM Invention Plateau Awards, and a Research Division Award for FINFET Technology. Min was named as IBM Master Inventor in 2006. Min co-authored 1 book chapter, 27 peer-reviewed journal articles, 43 conference proceedings and 71 U.S. patents. Based on her outstanding technical background, Min had served as a technical assistant to various IBM’s Vice Presidents.

Princeton, Nj, Us

● Performed design, simulation, fabrication and characterization of the sub-100nm vertical p-channel MOSFET’s with SiGe source/drains● Performed Si/SiGe selective epitaxy using Rapid Thermal Chemical Vapor Deposition; Developed abrupt phosphorus dopant profiles during Si epitaxy by RTCVD.● Calculation of zero, one, two and three-dimensional strain and quantum effects on band structures in (Si, SiGe, SiGeC) systems.

上海, 上海市, Cn

● Studied Photoluminescence of GeSi/Si quantum wells grown by molecular beam epitaxy (MBE)● Studied material and optical properties of light-emitting porous Si by Raman scattering and photoluminescence● Theoretical calculation of quantum field effect directional coupler

Doctor Of Law - Jd

Juris Doctor, Law

Doctor Of Philosophy (Ph.D.), Electrical Engineering

Master’S Degree, Physics

Bachelor’S Degree, Physics