Nathan Batson Email & Phone Number

Boise, Idaho Area

* VLSI design, device characterization, and data analysis of Chalcogenide based films and Memristor based devices and circuits. * Tape-out to MOSIS of experimental chip containing memristor based circuits and param structures. Additional BEOL processing was done to add memristor device to MOSIS processed die.

* Over 10 years experience in semiconductors, performing product definition, simulation, silicon debug, characterization, test, compatibility testing, and manufacturing yield improvement. * Experience with semiconductor processes and issues at 50nm, 110nm, 180nm, and larger processes. * Providing input, simulation and verification of DFT (Design For Test).

* Performed the same duties and had the same responsibilities as a Micron Engineer (as described in the Micron Product Engineer position above). * Job was rolled into Micron Product Engineering group upon Micron's buyout of TI's Memory division.

* Compatibility testing and debug of the DRAM Memory to chipset interface on PC motherboards. Methodology primarily oriented around: -- Analyze fail history for clues for causes of failure: i.e. common addresses, etc -- Modify chipset's configuration to decrease or increase rate of failure -- Scope control signals for runt pulses, non-monotonic edges, and.

* Responsible for release of small-signal transistors (i.e. discrete transistors) from vendors outside IBM (i.e. Motorola, National Semi, etc) for corporate wide use. * Part of Team that audited suppliers manufacturing lines as part of IBM's Vendor Qualification process (insure quality manufacturing controls at supplier’s fabrication site). * Developed.

Master'S Of Science, Electrical Engineer

Activities and Societies: Member of the IEEE Electron Device SocietyThesis: Growth of Strained Silicon Germanium films on Silicon.

Bachelor'S Of Science, Electrical Engineering

Solar Powered Car Design Project: Team Leader of Computer Monitoring Design Group, coordinating the design activities of eight electrical.