A Z M Nowzesh Hasan, Ph.D. Email and Phone Number
A Z M Nowzesh Hasan, Ph.D. work email
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A Z M Nowzesh Hasan, Ph.D. personal email
A Z M Nowzesh Hasan is a career-appointed Semiconductor Device Engineer at Lawrence Berkeley National Laboratory with Semiconductor Detector Laboratory (SDL) group in Berkeley, California, USA. He is also an active member of the Marvell Nanofabrication Laboratory, at the University of California since 2019.Research interests & expertise: - Solid state devices (Diodes, MOSFETs, CCDs, Silicon detectors, Silicon zone plates)- Device Electrical & Thermal Characterizations- HV HC CV IV measurement - Cleanroom Fabrication: PE CVD Ox Nit; Ox Nit Dry Etch; Silicon BOSCH etch; RIE; UV patterning & development, metal deposition: thermal & e-beam evaporation, wafer & chip dicing, silicon wet etch: polishing etch, concentration-dependent etch, TMAH.- Metrology: Optical Microscope; Confocal Microscope; Profiler; Profilometer; 4-pt probe resistivity measurement; thin film thickness measurement; SEM - EDx; - Qualified for Instruments' Operation: CHA e-beam evaporator (UC-B); Picotrack Coater System (UC-B); Headway spinner (UC-B); Rapid thermal annealer (UC-B); Oxford Plasmalab PE CVD system (UC-B); Technics C RIE (UC-B); YES-G500 Plasma Cleaning (UC-B); MxP+ Nit Ox Etcher (UC-B); Surface Technology Systems BOSCH etcher (UC-B); STS Advanced Planar Ox etcher (UC-B); Dektak 3030 Surface Profiler (UC-B); NanoSpec Film Thickness Measurement System (UC-B); Keyence VHX-500 Digital Microscope (UC-B); Olympus LEXT OLS4000 3D Laser Confocal Microscope (UC-B); Quintel Q4000, Karl Suss MA6 Mask Aligner (UC-B); SE 850 Spectroscopic Ellipsometer; Hitachi S-4800 SEM & EDSOther Expertise: - Coding/data analysis/languages: Excel Macro; Python; SQL - Six Sigma Green Belt Certified - Design of Experiments- Photo-mask design: k-layout & L-Edit - Mechanical Part Design: SOLIDWORKS
Berkeley Lab
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Senior Semiconductor Device Engineer (Career Appointment)Berkeley Lab Jul 2023 - PresentBerkeley, Ca, Us -
Semiconductor Device Engineer (Career Appointment)Berkeley Lab Sep 2019 - Jun 2023Berkeley, Ca, Us -
Member (Berkeley Marvell Nanolab, University Of California, Berkeley, Usa)Marvell Nanofabrication Laboratory Sep 2019 - PresentInstruments I am qualified to operate at University of California, Berkeley: Berkeley Marvell NanoLab, University of California, Berkeleyo Plasma Enhanced Chemical Vapor Deposition (Oxford2): Silicon Nitride & Silicon Oxide o Deep Reactive Ion Etch (STS2): Silicon etch using the BOSCH process o Inductive Coupled Plasma Etch (Centura MxP+): Etch Silicon Nitride & Silicon Oxide o Silicon wafer Dicing (DISCOS DAD3240): Dicing up to 8” Silicon wafer
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Post Doctoral Research AssociateLouisiana Tech University Feb 2019 - Sep 2019Ruston, La, Us -
Graduate Research AssistantLouisiana Tech University Sep 2014 - Nov 2018Ruston, La, UsProject Experience: Silicon n-channel MOSFET device fabrication TCAD simulation: Winter 2018o Device fabrication process simulation: Silicon n-channel MOSFET (p-type body, 100 nm gate-length) using TCAD (TSUPREM4)Silicon n-channel MOSFET device performance TCAD simulation: Spring 2018o By changing the thickness of the epitaxial layer in NMOS, we modeled a theoretical profile between the impurity concentration and threshold voltage. For the thickness between 40 nm ~ 60 nm, we obtained stable threshold voltage values, less independent on impurity concentrationGraphene Field‐Effect Transistors: Device Fabrication Summer 2017 – Spring 2018o Mono-layer graphene film synthesized on thin copper foil from methane using chemical vapor deposition process o Graphene field-effect transistors fabrication process flow: critical cleaning, graphene and hexagonal boron nitride film transfer using wet etching, electrode patterning, lift-off, channel patterning, chip isolation, annealing Graphene Field‐Effect Transistors: Device Characterization Summer 2017 – Fall 2018o Contact resistance with Schottky barrier analyzed between graphene and metal contact in different gate biasing conditiono Device capacitance-voltage (CV) characteristics measured at different applied frequency: like conventional MOSFET, graphene field-effect transistors exhibit a similar response in the higher frequency domain -
Graduate Teaching AssistantLouisiana Tech University Sep 2014 - Aug 2018Ruston, La, UsTeaching Assistant:MSE 510: Microsystem design, fabrication, and test lab (Cleanroom FAB) (Supervisor: Dr. A Radadia)PHYS 261 & 262: General Physics Laboratory (Supervisor: Dr. John Shaw)ELEN 334: Solid State Electronics (Supervisor: Dr. Sandra Zivanovic)NSE 302: Nanomanufacturing (Supervisor: Dr. A Radadia)ELEN 242: Introduction To Microprocessors (Supervisor: Dr. Davis Harbour) -
Microfabrication Cleanroom Process InstructorInstitute For Micromanufacturing (Ifm), Louisiana Tech University Nov 2014 - Feb 2018o Course instructor: device layout and microfabrication process flow design, feasibility analysis, process documentation, process development and demonstration, fabrication characterization in metrology, device electrical characterization
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Metrology Instructor (Demonstration, Operation, And Maintenance)Institute For Micromanufacturing (Ifm), Louisiana Tech University Mar 2017 - Jun 2017Student instructor for the following metrology tools/instruments: mentoring new users on operational principles: o Film thickness: Ellipsometer (SE 850) o Thin-Film Analyzer (FILMETRICS® F10RT) o Stylus Surface Profiler (Dektak 150)o Scanning Electron Microscope w/ EDS (HITACHI® S-4800 field-emission) o Atomic Force Microscope (Agilent 5420) o Optical Microscope (Leica DM4000 M, OLYMPUS Vanox AHMT3) o 3D Confocal Microscope (VK-X250, Keyence®) o Raman Spectroscopy (HORIBA Scientific XploR PLUS) Supervisor: Mr. Phillip ChapmanEngineerDepartment of Material Science & Engineering - Materials Characterization and ProcessingJohns Hopkins UniversityEx-Associate Director of OperationsInstitute for MicromanufacturingLouisiana Tech University
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Training On Scanning Probe Microscopy (Spm)Oak Ridge National Laboratory Apr 2017 - Apr 2017Oak Ridge, Tn, UsTime Period: April 24, 2017, to April 28, 2017 (One week)Instrument: Cypher North Scanning Probe Microscopy, Asylum Research InstrumentTraining Topics: AC mode imaging on graphene surface Scanning Kelvin Probe Microscopy (SKPM) for potential distribution of surface Local Oxidation Nanolithography on graphene surface (Contact mode)Supervisor: Liam CollinsPost-Doctoral Research Associate Oak Ridge National LaboratoryOak Ridge, TN -
Manager, Rf Planning & Corporate AffairsRobi Axiata Limited Nov 2012 - Aug 2014Tejgaon, Dhaka, Bd• Conducting technical research/analysis on regulatory best practices (Telecom Act, National policies, directives, guidelines) and approach to the regulator to get favorable outcomes for the business• Planning and pricing of spectrum.• Ensuring timely payment of spectrum price, license fee, revenue sharing, and interconnection charge.• Providing support to all the functional teams (Technology, Finance and Market Operation) from regulatory point of view to achieve business objectives.• Building, managing and maintaining strategic relationships with the external stakeholders (Regulators,Government bodies, other operators)• Analysing regulatory risk of the enterprise in assistance with the Group Regulatory.• To be aligned with regulatory compliance to ensure smooth business operation.• Keeping knowledge on latest regulatory developments and reporting to Group Regulatory/Corporate office. -
Senior System Engineer, Radio PlanningGrameenphone Ltd Jul 2007 - Nov 2011Dhaka, Bd
A Z M Nowzesh Hasan, Ph.D. Skills
A Z M Nowzesh Hasan, Ph.D. Education Details
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Louisiana Tech UniversityMicro And Nanosystem Engineering -
Louisiana Tech UniversityMicrosystems Engineering -
Bangladesh University Of Engineering And TechnologyElectrical And Electronic Engineering (Eee)
Frequently Asked Questions about A Z M Nowzesh Hasan, Ph.D.
What company does A Z M Nowzesh Hasan, Ph.D. work for?
A Z M Nowzesh Hasan, Ph.D. works for Berkeley Lab
What is A Z M Nowzesh Hasan, Ph.D.'s role at the current company?
A Z M Nowzesh Hasan, Ph.D.'s current role is Senior Semiconductor Device Engineer, Lawrence Berkeley National Laboratory | PhD in Nanotechnology | Member, Marvell NanoLab & BNC, UC Berkeley, California, USA || EEE-BUET.
What is A Z M Nowzesh Hasan, Ph.D.'s email address?
A Z M Nowzesh Hasan, Ph.D.'s email address is ah****@****lbl.gov
What schools did A Z M Nowzesh Hasan, Ph.D. attend?
A Z M Nowzesh Hasan, Ph.D. attended Louisiana Tech University, Louisiana Tech University, Bangladesh University Of Engineering And Technology.
What are some of A Z M Nowzesh Hasan, Ph.D.'s interests?
A Z M Nowzesh Hasan, Ph.D. has interest in Social Services, Children, Economic Empowerment, Civil Rights And Social Action, Politics, Education, Environment, Poverty Alleviation, Science And Technology, Disaster And Humanitarian Relief.
What skills is A Z M Nowzesh Hasan, Ph.D. known for?
A Z M Nowzesh Hasan, Ph.D. has skills like Semiconductor Fabrication, Gsm, Telecommunications, 3g, Gprs, 2g, Nanotechnology, Rf, Network Design, Wcdma, Ip, Core Network.
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