A Z M Nowzesh Hasan, Ph.D.

A Z M Nowzesh Hasan, Ph.D. Email and Phone Number

Senior Semiconductor Device Engineer, Lawrence Berkeley National Laboratory | PhD in Nanotechnology | Member, Marvell NanoLab & BNC, UC Berkeley, California, USA || EEE-BUET @ Berkeley Lab
A Z M Nowzesh Hasan, Ph.D.'s Location
Berkeley, California, United States, United States
A Z M Nowzesh Hasan, Ph.D.'s Contact Details

A Z M Nowzesh Hasan, Ph.D. work email

A Z M Nowzesh Hasan, Ph.D. personal email

n/a
About A Z M Nowzesh Hasan, Ph.D.

A Z M Nowzesh Hasan is a career-appointed Semiconductor Device Engineer at Lawrence Berkeley National Laboratory with Semiconductor Detector Laboratory (SDL) group in Berkeley, California, USA. He is also an active member of the Marvell Nanofabrication Laboratory, at the University of California since 2019.Research interests & expertise: - Solid state devices (Diodes, MOSFETs, CCDs, Silicon detectors, Silicon zone plates)- Device Electrical & Thermal Characterizations- HV HC CV IV measurement - Cleanroom Fabrication: PE CVD Ox Nit; Ox Nit Dry Etch; Silicon BOSCH etch; RIE; UV patterning & development, metal deposition: thermal & e-beam evaporation, wafer & chip dicing, silicon wet etch: polishing etch, concentration-dependent etch, TMAH.- Metrology: Optical Microscope; Confocal Microscope; Profiler; Profilometer; 4-pt probe resistivity measurement; thin film thickness measurement; SEM - EDx; - Qualified for Instruments' Operation: CHA e-beam evaporator (UC-B); Picotrack Coater System (UC-B); Headway spinner (UC-B); Rapid thermal annealer (UC-B); Oxford Plasmalab PE CVD system (UC-B); Technics C RIE (UC-B); YES-G500 Plasma Cleaning (UC-B); MxP+ Nit Ox Etcher (UC-B); Surface Technology Systems BOSCH etcher (UC-B); STS Advanced Planar Ox etcher (UC-B); Dektak 3030 Surface Profiler (UC-B); NanoSpec Film Thickness Measurement System (UC-B); Keyence VHX-500 Digital Microscope (UC-B); Olympus LEXT OLS4000 3D Laser Confocal Microscope (UC-B); Quintel Q4000, Karl Suss MA6 Mask Aligner (UC-B); SE 850 Spectroscopic Ellipsometer; Hitachi S-4800 SEM & EDSOther Expertise: - Coding/data analysis/languages: Excel Macro; Python; SQL - Six Sigma Green Belt Certified - Design of Experiments- Photo-mask design: k-layout & L-Edit - Mechanical Part Design: SOLIDWORKS

A Z M Nowzesh Hasan, Ph.D.'s Current Company Details
Berkeley Lab

Berkeley Lab

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Senior Semiconductor Device Engineer, Lawrence Berkeley National Laboratory | PhD in Nanotechnology | Member, Marvell NanoLab & BNC, UC Berkeley, California, USA || EEE-BUET
A Z M Nowzesh Hasan, Ph.D. Work Experience Details
  • Berkeley Lab
    Senior Semiconductor Device Engineer (Career Appointment)
    Berkeley Lab Jul 2023 - Present
    Berkeley, Ca, Us
  • Berkeley Lab
    Semiconductor Device Engineer (Career Appointment)
    Berkeley Lab Sep 2019 - Jun 2023
    Berkeley, Ca, Us
  • Marvell Nanofabrication Laboratory
    Member (Berkeley Marvell Nanolab, University Of California, Berkeley, Usa)
    Marvell Nanofabrication Laboratory Sep 2019 - Present
    Instruments I am qualified to operate at University of California, Berkeley: Berkeley Marvell NanoLab, University of California, Berkeleyo Plasma Enhanced Chemical Vapor Deposition (Oxford2): Silicon Nitride & Silicon Oxide o Deep Reactive Ion Etch (STS2): Silicon etch using the BOSCH process o Inductive Coupled Plasma Etch (Centura MxP+): Etch Silicon Nitride & Silicon Oxide o Silicon wafer Dicing (DISCOS DAD3240): Dicing up to 8” Silicon wafer
  • Louisiana Tech University
    Post Doctoral Research Associate
    Louisiana Tech University Feb 2019 - Sep 2019
    Ruston, La, Us
  • Louisiana Tech University
    Graduate Research Assistant
    Louisiana Tech University Sep 2014 - Nov 2018
    Ruston, La, Us
    Project Experience: Silicon n-channel MOSFET device fabrication TCAD simulation: Winter 2018o Device fabrication process simulation: Silicon n-channel MOSFET (p-type body, 100 nm gate-length) using TCAD (TSUPREM4)Silicon n-channel MOSFET device performance TCAD simulation: Spring 2018o By changing the thickness of the epitaxial layer in NMOS, we modeled a theoretical profile between the impurity concentration and threshold voltage. For the thickness between 40 nm ~ 60 nm, we obtained stable threshold voltage values, less independent on impurity concentrationGraphene Field‐Effect Transistors: Device Fabrication Summer 2017 – Spring 2018o Mono-layer graphene film synthesized on thin copper foil from methane using chemical vapor deposition process o Graphene field-effect transistors fabrication process flow: critical cleaning, graphene and hexagonal boron nitride film transfer using wet etching, electrode patterning, lift-off, channel patterning, chip isolation, annealing Graphene Field‐Effect Transistors: Device Characterization Summer 2017 – Fall 2018o Contact resistance with Schottky barrier analyzed between graphene and metal contact in different gate biasing conditiono Device capacitance-voltage (CV) characteristics measured at different applied frequency: like conventional MOSFET, graphene field-effect transistors exhibit a similar response in the higher frequency domain
  • Louisiana Tech University
    Graduate Teaching Assistant
    Louisiana Tech University Sep 2014 - Aug 2018
    Ruston, La, Us
    Teaching Assistant:MSE 510: Microsystem design, fabrication, and test lab (Cleanroom FAB) (Supervisor: Dr. A Radadia)PHYS 261 & 262: General Physics Laboratory (Supervisor: Dr. John Shaw)ELEN 334: Solid State Electronics (Supervisor: Dr. Sandra Zivanovic)NSE 302: Nanomanufacturing (Supervisor: Dr. A Radadia)ELEN 242: Introduction To Microprocessors (Supervisor: Dr. Davis Harbour)
  • Institute For Micromanufacturing (Ifm), Louisiana Tech University
    Microfabrication Cleanroom Process Instructor
    Institute For Micromanufacturing (Ifm), Louisiana Tech University Nov 2014 - Feb 2018
    o Course instructor: device layout and microfabrication process flow design, feasibility analysis, process documentation, process development and demonstration, fabrication characterization in metrology, device electrical characterization
  • Institute For Micromanufacturing (Ifm), Louisiana Tech University
    Metrology Instructor (Demonstration, Operation, And Maintenance)
    Institute For Micromanufacturing (Ifm), Louisiana Tech University Mar 2017 - Jun 2017
    Student instructor for the following metrology tools/instruments: mentoring new users on operational principles: o Film thickness: Ellipsometer (SE 850) o Thin-Film Analyzer (FILMETRICS® F10RT) o Stylus Surface Profiler (Dektak 150)o Scanning Electron Microscope w/ EDS (HITACHI® S-4800 field-emission) o Atomic Force Microscope (Agilent 5420) o Optical Microscope (Leica DM4000 M, OLYMPUS Vanox AHMT3) o 3D Confocal Microscope (VK-X250, Keyence®) o Raman Spectroscopy (HORIBA Scientific XploR PLUS) Supervisor: Mr. Phillip ChapmanEngineerDepartment of Material Science & Engineering - Materials Characterization and ProcessingJohns Hopkins UniversityEx-Associate Director of OperationsInstitute for MicromanufacturingLouisiana Tech University
  • Oak Ridge National Laboratory
    Training On Scanning Probe Microscopy (Spm)
    Oak Ridge National Laboratory Apr 2017 - Apr 2017
    Oak Ridge, Tn, Us
    Time Period: April 24, 2017, to April 28, 2017 (One week)Instrument: Cypher North Scanning Probe Microscopy, Asylum Research InstrumentTraining Topics: AC mode imaging on graphene surface Scanning Kelvin Probe Microscopy (SKPM) for potential distribution of surface Local Oxidation Nanolithography on graphene surface (Contact mode)Supervisor: Liam CollinsPost-Doctoral Research Associate Oak Ridge National LaboratoryOak Ridge, TN
  • Robi Axiata Limited
    Manager, Rf Planning & Corporate Affairs
    Robi Axiata Limited Nov 2012 - Aug 2014
    Tejgaon, Dhaka, Bd
    • Conducting technical research/analysis on regulatory best practices (Telecom Act, National policies, directives, guidelines) and approach to the regulator to get favorable outcomes for the business• Planning and pricing of spectrum.• Ensuring timely payment of spectrum price, license fee, revenue sharing, and interconnection charge.• Providing support to all the functional teams (Technology, Finance and Market Operation) from regulatory point of view to achieve business objectives.• Building, managing and maintaining strategic relationships with the external stakeholders (Regulators,Government bodies, other operators)• Analysing regulatory risk of the enterprise in assistance with the Group Regulatory.• To be aligned with regulatory compliance to ensure smooth business operation.• Keeping knowledge on latest regulatory developments and reporting to Group Regulatory/Corporate office.
  • Grameenphone Ltd
    Senior System Engineer, Radio Planning
    Grameenphone Ltd Jul 2007 - Nov 2011
    Dhaka, Bd

A Z M Nowzesh Hasan, Ph.D. Skills

Semiconductor Fabrication Gsm Telecommunications 3g Gprs 2g Nanotechnology Rf Network Design Wcdma Ip Core Network Umts Matlab Project Planning Network Optimization Nanowires Nanofabrication Eis Radio Frequency Electrochemical Characterization Tsuprem4 Microsoft Office Cmos Fabrication Design Scanning Electron Microscopy Atomic Force Microscopy Materials Science Optical Microscopy Device Architecture And Fab Process Development Electrical Characterization Of 2d Carbon Based Materials Metrology Python Tsuprem4 Team And Project Management Collaboration Medici Optical Lithography Etching Lift Off Process Critical Cleaning Surface Preparation Oxidation O Ellipsometer O Thin Film Analyzer O Stylus Surface Profiler O Scanning Electron Microscope W/ Eds O Atomic Force Microscope O Optical Microscope O 3d Confocal Microscope O Raman Spectroscopy O Reactive Ion Etcher O Aja Magnetron Sputter System O Mask/bond Aligner Electrochemical Impedance Spectroscopy Autocad Labview Solidworks

A Z M Nowzesh Hasan, Ph.D. Education Details

  • Louisiana Tech University
    Louisiana Tech University
    Micro And Nanosystem Engineering
  • Louisiana Tech University
    Louisiana Tech University
    Microsystems Engineering
  • Bangladesh University Of Engineering And Technology
    Bangladesh University Of Engineering And Technology
    Electrical And Electronic Engineering (Eee)

Frequently Asked Questions about A Z M Nowzesh Hasan, Ph.D.

What company does A Z M Nowzesh Hasan, Ph.D. work for?

A Z M Nowzesh Hasan, Ph.D. works for Berkeley Lab

What is A Z M Nowzesh Hasan, Ph.D.'s role at the current company?

A Z M Nowzesh Hasan, Ph.D.'s current role is Senior Semiconductor Device Engineer, Lawrence Berkeley National Laboratory | PhD in Nanotechnology | Member, Marvell NanoLab & BNC, UC Berkeley, California, USA || EEE-BUET.

What is A Z M Nowzesh Hasan, Ph.D.'s email address?

A Z M Nowzesh Hasan, Ph.D.'s email address is ah****@****lbl.gov

What schools did A Z M Nowzesh Hasan, Ph.D. attend?

A Z M Nowzesh Hasan, Ph.D. attended Louisiana Tech University, Louisiana Tech University, Bangladesh University Of Engineering And Technology.

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A Z M Nowzesh Hasan, Ph.D. has interest in Social Services, Children, Economic Empowerment, Civil Rights And Social Action, Politics, Education, Environment, Poverty Alleviation, Science And Technology, Disaster And Humanitarian Relief.

What skills is A Z M Nowzesh Hasan, Ph.D. known for?

A Z M Nowzesh Hasan, Ph.D. has skills like Semiconductor Fabrication, Gsm, Telecommunications, 3g, Gprs, 2g, Nanotechnology, Rf, Network Design, Wcdma, Ip, Core Network.

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