RF Technology Consultant, a contract with Shin-Etsu Handotai(JAPAN)

1. Development of SOI (Silicon on Insulator) substrates for RF Active Devices 2. Development of SOIs such as HR-SOI, Trap-rich SOI, and Super-low-distortion SOI3. Development of Si Substrate for IPD ( Integrated Passive devices) and RF-filters

Title: Microwave Device Engineer & Group ManagerRF Devices that I developed : High Power SIT for Microwave Oven High Power VDMOS/LDMOS for RF Base Station Low Noise HEMT for satellite broadcasting GaAs Power Module for Cellular Phone Low-noise-amplifiers using SiGe & SiGeC devices SOS/SOI SW-IC for Cellular Phone etc.. Please Log-in the next IEEE site ( http://ieeexplore.ieee.org/Xplore/home.jsp ) and Key-in the Author's Name: O ( first name ) ISHIKAWA ( Family name ) You can see my technical papers related to RF semiconductors.