Parshant Kumar Email and Phone Number
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ExperienceMore than 15 years of proven experience in developing solutions in the different areas of Semiconductors- RFICs/MMIC based on Si, GaAs, and GaN on Si/ SiC substrate devices, MEMS/BioMEMS, E-field, and optical sensors for brain-sensing and stimulations, thermoelectric power generation devices for space applications, solutions for hardware anti-tamper, reliability, and radiation hardening. Total 8 patents and 1 pending Collaborated with Universities and Labs to successfully develop prototypes and products. Transfer the know-how or processes to vendors for low-rate production or transfer process from LABs to full productionMentor the staff and individual, Inventor and innovator, and Influencer Expertise and knowledge • Electron Cyclotron Plasma system design and development for CMOS design and fabrication • Integrate RIBE etch to develop CMOS devices and characterization with a partner with Semiconductor Complex Limited of India • III-V-based HEMT and MEMS • Micro and Nanofabrication and Testing of Micro/Nanosystem• Developed processes for Si/diamond/polymer-based semiconductors and MEMS devices • AlGaAs based rf resonators and ICs – Supervise mechanical and electrical engineers to develop prototypes - DAFRPA NEMS program - 2002- 2006• Si-based ICs radiation hardening reliability • Diamond-based gyroscope - MRIG DARPA program • Metal, Silicone, and Polyurethane climbing system - DARPA program –From prototype to Production - Low rate production at Draper -One Patent - 2007- 2016 • Optical Neuro probes- OPTRODE program (DAPRA)- 50 um diameter and 3 mm long fibers on the wafer and released from wafer to be flexible for the red and blue light to stimulate neuron and communication • Wireless stimulation of neurons using 1.2 mm x 0.5 mm particle size device -Developed and low rate production for AHA for clinical trial • PDOT based Organic transistor for drug detection - Design, developed and tested • Supply Chain Hardware Integrity for Electronics Defense (SHIELD)- DARPA -Mechanical fragility to the CMOS devices to protect the electronics - 2014- 2019• Anti-Temper Solution Development – Product-specific as well as general chemically amplified solution to defeat FIB attacks for reverse engineering solutions • MRNA: Developed BeTe thermoelectric-based energy harvester for space applications -DARPA program
Macom
View- Website:
- macom.com
- Employees:
- 1
- Company phone:
- 978.656.2500
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Product Engineering; PrincipalMacom Sep 2020 - PresentLowell, Ma, Us
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Senior Technical StaffCs Draper Laboratroy Mar 2007 - Aug 2020Cambridge, Ma, Us• Micro and Nanofabrication and Testing of Micro/Nano system• III-V based HEMT and MEMS • Developed processes for Si/diamond/polymer-based semiconductors and MEMS/BioMEMS devices • Si-based radiation hard and reliable ICs and Microsystem • Diamond based gyroscope - MRIG DARPA program • GaN-based amplifier • Metal, Silicone, and Polyurethane based climbing system (DARPA program) –From prototype to Production - Low-rate production at Draper -One Patent • Optical Neuro probes (DAPRA)- 50 um diameter and 3 mm long fibers on the wafer and released from wafer to be flexible for the red and blue light to stimulate neuron and communication - patent pending • Wireless stimulation of neurons using 1.2 mm x 0.5 mm particle size device -Developed and low rate production for American heart association for clinical trial • PDOT based Organic transistor for drug detection - Design, developed and tested -patent pending • Carbon nanotube-based devices and research - growth, purification, transistors, MEMS, interconnects and devices and Process: Spray coated CNTs antenna on paper and glass substrate as X-rays transparent antenna for SOCOM• MRNA: Developed BeTe thermoelectric based energy harvester for space applications -DARPA program • Anti-Temper Solution Development – Product-specific as well general chemically amplified solution to defeat FIB attacks for reverse engineering solutions• Supply Chain Hardware Integrity for Electronics Defense (SHIELD)- DARPA -Mechanical fragility added to the CMOS devices to protect the electronics -a collaboration with NRL and Nrothgrumann • Analytical modeling of rf devices and MEMS TCAD ( Silvaco and Synopsis) for physics device simulation and Pathwave -Advance Design system for electrical simulations for performance evaluation • Project/ program and People management experience • Writing proposals and doing Business developmentUnderstanding the quantum computers and computing R&D Mentor, influencer, invemtor -
Research Associate And Fellow - Solid State Electronics DevicesMechanical Deptt, University Of Maryland And Nsa -Laboratory Of Physical Science Sep 2001 - Feb 2007DARPA Nano Electro-Mechanical System for Signal Processing Program to develop rf filter based on III-V materials Design and fabrication of AlGaAs based rf piezoelectric MEMS and HEMTs ICs Si and III-V MEMS development, Si and Polymer-based microfluidic system and Si nanostructures development for low volume sample analysis.Program Dettails from DARPA release NanoMechanical Array Signal Processors (NMASP)The NMASP program[4] aims at creating arrays of precision,nanomechanical structures (Figure 3) for RF-signal processingthat will achieve:• >100X reduction in size (from 80 cm2 to 0.8 cm2 or smaller),• >100X reduction in power consumption (from 300 mWto less than 3 mW during receive, and from 30 mW to <0.3 mW during standby, compared to current cellphones), and• >10X improvement in RF performance (spectral efficiency and bandwidth). The development of nanomechanical array signal processors will enable ultra miniaturized (wristwatch or hearing aid in size) and ultra low power UHF communicators/GPS receivers which will greatly improve the mobility and location identification of individual warfighters. They can also be used for miniaturization and integration of stand-alone, self-contained, wireless microsensors and microactuators that can be deployed remotely in clusters to drastically enhance superiority of weapon systems and field awareness. Other potential uses for military applications include an ultra portable spectrum analyzer, Fourier signal-transformer, programmable equalizer, frequency converter, parametric amplifier, and other UHF signalprocessing equipment.Core NMASP technologies can also be used for mass spect ro m e t e r, calorimeter, bolometer†, and high-resolution IR imager applications. All of these NMASP applications will be c h a r a c t e r i zed by significant power reduction and/or ultra miniaturization while meeting or exceeding the performance levels of the state-of-practice approaches. T
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Postdoctoral Research FellowTransducer Group, Deptt Of Ee, Univeristy Of Twente, Netherlands Nov 2000 - Aug 2001Development of Micro system for Nano free patterning of metal nano patterns for interconenects and Biosensors. MEMS device on top of membrane with nano pattern in it to free writing of metal nano patterns usign MEMS devices
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Visiting FellowSemiconductor Processing Laboratory, Department Of Material Engineering University Of Sangkyunkwan, Apr 2000 - Aug 2000Developed Atomospheric plasma ashers III-V MEMS
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Visiting FellowDepartment Of Electrical Enginering, Prof Mark Wallend Group Apr 2000 - Apr 2000Integration of MEMS device to the beam metal deposition system for random metal nanopatterning.
Parshant Kumar Skills
Parshant Kumar Education Details
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Central Scientific Instrument Organisation And Panjab UniversityMicroelectronics - Applied Physics -
OracleOracle Certified Professional
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Department Of Computer Science - Kurukshetra University, Kurukshetra, Hr, IndiaComputer Engineering
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Center Of Advanced Technolgoy (National Lab- Doe) Indore, IndiaAnd Bio Electronics
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Panjab UniversitySolid Sate Electronics
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Maharishi Dayanand Saraswati University, AjmerAnd Chemistry
Frequently Asked Questions about Parshant Kumar
What company does Parshant Kumar work for?
Parshant Kumar works for Macom
What is Parshant Kumar's role at the current company?
Parshant Kumar's current role is More than 15 years of experience in developing solutions in the areas of Semiconductors RFICs &MMIC, MEMS/BioMEMS, Brain-sensing and stimulation, Sensors, and Software and Data management fields.
What is Parshant Kumar's email address?
Parshant Kumar's email address is pk****@****per.com
What is Parshant Kumar's direct phone number?
Parshant Kumar's direct phone number is +161725*****
What schools did Parshant Kumar attend?
Parshant Kumar attended Central Scientific Instrument Organisation And Panjab University, Oracle, Department Of Computer Science - Kurukshetra University, Kurukshetra, Hr, India, Center Of Advanced Technolgoy (National Lab- Doe) Indore, India, Panjab University, Maharishi Dayanand Saraswati University, Ajmer.
What are some of Parshant Kumar's interests?
Parshant Kumar has interest in Science And Technology.
What skills is Parshant Kumar known for?
Parshant Kumar has skills like Mems, Nanotechnology, Sensors, Thin Films, Characterization, Etching, Semiconductors, R&d, Cmos, Polymers, Materials Science, Microfabrication.
Who are Parshant Kumar's colleagues?
Parshant Kumar's colleagues are Stephen Sheehan, Tom Hanrahan, Hellen He, Gary Smith, Thomas Durant, Arnold Motley, Bryan Gallivan.
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