Based in Shanghai, I am responsible for business development through non-domestic M&A, Alliances and licensing; I also serve as the company export compliance officer.

Together with IBM counterpart, responsible for developing an effective future for Altis. Altis is a captive foundry owned jointly by Infineon and IBM. We engaged a number of potential buyers, of these a limited number were taken through to due diligence of which one was brought to final signature.

The bulk of this time part of a 3-person team responsible for evaluating and negotiating Joint Ventures (Development and Manufacturing). Reporting directly to the CEO and the Board of Directors, developed agreements with partners principally in the US & Taiwan. Work included strategic planning, financing & negotiation. Partcipated in; Valuation, Scenario Planning, Due Diligence, fund raising (Investor Road Show), contract negotiation, closure and arbitration. Publicly disclosed contracts include; Chartered, ProMOS, NanYa, UMCi, UMC, IBM. Received a special bonus in recognition of successfully closing the ProMOS contract.Oct 1997 – Jan 1999Responsible for the successful transfer of DRAM technology between Infineon’s sites in: Germany, Taiwan & the United States. Tasks included assisting assignees as they worked to understand Infineon’s tools & systems at our reference site & insuring alignment of best practices.

Responsible for product and business Development of MOSAID’s memory circuit designs. My tasks included; contract negotiations, design and device debug, yield improvement, product qualification (and market introduction), royalty revenue forecasting and participating in corporate strategy policy-making. I worked at the customer’s production facilities in Japan and Korea during product debug and early ramp. These activities resulted in extremely profitable royalty revenues for the company and subsequent IP income. MOSAID had previously been unsuccessful at getting any parts into mass production. Received a special bonus in recognition of the royalties generated for the company. Products brought to market included: Standard DRAMs, SDRAMs, a 768Kb Embedded DRAM for 1.244Gb/s ATM switch in a 0.8u Logic process.

Successfully brought to qualification a (then state-of-the-art) 1.0u, double metal, silicide with straps, CMOS process which was subsequently transferred to TSMC. Responsible for the management and execution of all product aspects including: product/process debug and characterization; yield optimization; reliability (trials, interpretation and qualification); device parameter verification and impact on product performance.

Defined and commissioned the labor, software and equipment requirements to establish a Product Engineering Department for a 1.2u triple Poly CMOS Technology. (Product was 1 Mb DRAM purchased from Toshiba). Managed the successful development of my department including: recruitment, development and management of 20 person staff; yield analysis at wafer and final test; feedback of results to Production Management and liaison with Japanese partners.

July 1985 – Jan 1986 Product Transfer Manager Responsible for successful transfer and initial product debug into new NMBS, Fab in Tateyama, Japan of Inmos' (also new) 256 Kb DRAM.Oct 1984 – July 1985 Senior Product Engineer – Colorado Springs, USAEmigrated to US, successfully brought a 4Kbx4 CMOS High speed SRAM to production. Accountable for; product introduction, testing, design debug, yield enhancement, characterization, laser repair, test software and data sheet. Jan 1982 – May 1984 Product EngineerTrained at Inmos’ facility in the USA (supported fast 16Kb SRAM); returned to establish product engineering department at green field facility in Newport UK. Successfully diagnosed the cause of initial qualification failures and worked with process engineers to identify the root cause. Developed and optimized the test programs for production. Loaned to the microprocessor design center in order to diagnose the failure cause of initial Transputer samples.

Hired as an Assistant Engineer and assigned to work on LF bipolar power devices. When I left, I was responsible for TI’s worldwide SCR and Triac Product Engineering.