I currently serve the EPFL community on Education, Research, and Innovation in Quantum, as the executive director of the Quantum Science and Engineering Center.

My role was, together with our team, to establish a materials platform to support topological quantum computing. I was responsible for Materials epitaxy at Microsoft Quantum Lab Delft.

My role was, together with our team, to establish a materials platform to support topological quantum computing. I was responsible for Materials epitaxy at Microsoft Quantum Lab Delft.

My role as Sêr Cymru Senior Research Fellow (open-ended, grade 8) was to conduct and lead academic research in nano-epitaxy within the School of Physics and Astronomy. I was also facility manager for the two brand‐new Veeco Gen930 Molecular Beam Epitaxy (MBE) reactors (III‐As,Sb and III‐N) that we have installed in January 2016. Our work has strong ties with the newly created Institute for Compound Semiconductors (ICS, Clive Meaton) part of the CS Connected Cluster, together with The Compound Semiconductor Center (CSC), The EPSRC Compound Semiconductor Hub, The Compound Semiconductor Applications Catapult, and IQE.

As an independantly funded ARC Future Fellow (4 years contract), I have developped growth of antimonide nanowires and their applications. I have also co-supervised 7 PhD students (all have graduated since). My most recent research interests have branched out to novel nanoscale material systems (II-Vs) and alternative engineered single crystal geometries (rings, nanowalls, nanomembranes...) grown via selective area epitaxy (SAE/SAG). Together with A/Prof. Adam Micolich from UNSW we have obtained an ARC Discovery grant to explore the quantum physics applications of these new heterostructured membranes (DP16).

Within the EPIPHY group, lead by Dr. Xavier Wallart, I have initiated a new and independent research activity on III-V nanowires grown by molecular beam epitaxy (MBE), with targeted applications in extremely low power high speed electronics and topological quantum computing. Important developments include pioneering contributions to gold-free self-seeded GaAs(Sb) nanowires as arrays integrated on silicon, first (ternary) antimonide nanowires by MBE. We also demonstrated STM studies on oxide-free nanowire surfaces thanks to an As-capping technique, and surface mediated high performance tunnel (Esaki) diodes.

‘Growth of III-V Nanowires by Metalorganic Vapour Phase Epitaxy for Nanoelectronics and Transport Physics’. Together with Mattias Jeppsson/Borg, we have pioneered antimonide nanowires growth, control and understanding. This work has lead to tremendous developments in quantum transport physics and nanoelectronics. Together with Dr. Kimberly Dick, we also pioneered crystal phase control and engineering in III-V nanowires, thereby pushing the limits of nanowire crystal growth control down to the atomic level.Senior mentors: Prof. Lars Samuelson and Prof. Lars-Erik Wernersson.

In the context of the ePIXnet European project to realize "High speed transmission bases on chirpless quantum dot laser sources". I developed the design, growth, and characterizations that allowed our team to demonstrate the first single mode continuous-wave quantum dot laser emitting at 1516 nm @300K. I also explored growth and applications of quantum wires (QWs) for the realization of vertical-cavity surface-emitting laser (VCSEL) structures with a stabilized polarization (InAs QWs on InP(001)).Production: 3 peer-reviewed journal articles, 3 peer-reviewed proceedings papers following international conferences/workshops.

This thesis deals with the study of InAs quantum dots (QDs) growth on InP(113)B, for laser applications around the 1.55 μm optical communication wavelength. QDs are formed in Stransky-Krastanow growth mode by molecular beam epitaxy. The main QD changes with the growth parameters reported in literature are briefly reviewed for InAs/GaAs and InAs/P and the experimental trends are discussed in the frame of nucleation/growth models. Then, structural and optical properties of QDs formed on InP(113)B are studied for different growth parameters. A reduction of the arsenic pressure during QD growth leads to a dramatic increase of the density, up to 1.6x10^11cm^-2, along with a reduction of the size dispersion. In an other part, we develop a new capping procedure in two steps, named "quaternary Double Cap procedure" (qDC), to control the emission wavelength. This procedure allows also a reduction of height dispersion and a narrowing photoluminescence linewidth to 40 meV. We optimize the QD stacking in order to improve laser performance. At high density, QD present very good vertical and lateral ordering and low size dispersion. Laser structures grown using the qDC procedure show lasing effect at room temperature. Lasers elaborated with low arsenic flux QDs present improved performance. In particular, a record low threshold current density of 190 A/cm^2 is achieved.