Established the DENSO R&D Lab at the University of Michigan Ann Arbor campus, leading the lab's focus on CASE (Connected, Autonomous, Shared, and Electric) technologies for connected automated and electric vehicles, as well as smart mobility. Oversaw research projects in various areas, including Wireless Power Transmission (WPT), Machine Learning (ML), Connected Automated Vehicle (CAV), Human Factors (HF), Vehicle-to-Everything (V2X), and Smart Mobility Ecosystem (SME) technology.• Collaborated with academic partners such as the University of Michigan, Massachusetts Institute of Technology, University of California Berkeley, Carnegie Mellon University, and Rensselaer Polytechnic Institute to drive innovation and research excellence.• Spearheaded strategic initiatives to address challenges and capitalize on opportunities in the field of connected automated vehicles, electric vehicles, and smart mobility. Managed project timelines, budgets, and resources to ensure successful project outcomes. Fostered a culture of creativity, collaboration, and continuous learning within the R&D team. • Provided technical marketing expertise and support to sales teams for the successful introduction of new CASE and ITS domain new products to Auto-OEMs and ITS companies over a decade-long tenure.

Spearheaded the development of wide bandgap semiconductor Silicon Carbide (SiC) power devices and double-sided cooled high efficiency SiC power module technologies, representing the next generation of power module technologies for hybrid and electric vehicles. In March 2023, DENSO announced its first-ever inverter with silicon carbide (SiC) semiconductors.• Fostered global academic collaborations with esteemed institutions such as the University of Cambridge (UK), University of Nottingham (UK), University of Newcastle (UK), KTH Royal Institute of Technology (Sweden), University of Tokyo (Japan), and Kyoto University (Japan).• Published in research journals/conferences and authored chapters in books focusing on Silicon Carbide (SiC) power electronics.

Led the design of wide bandgap semiconductor Silicon Carbide (SiC) low on-state resistance high voltage power devices for electric vehicles.• Developed an innovative SiC doping process using ion-implantation to reduce the power device degradation at high temperatures.• Realized a novel Accumulation-Mode 4H–SiC Epi-Channel Field Effect Transistor with an unique SiC embedded epitaxy process.• Awarded the Japanese Journal of Applied Physics best paper award for the paper titled "A Novel Diffusion Resistant P-Base Region Implantation for Accumulation Mode 4H–SiC Epi-Channel Field Effect Transistor."• Collaborated with academic partners including the University of Erlangen-Nuremberg (Germany), Kyoto University (Japan), and Nagoya University (Japan).

Led the design and fabrication process development of III-V compound semiconductor AlGaN hetero-junction optical and power devices.• As a Research Engineer, developed a new structure design titled "Multiple-Quantum Barrier in Active Region" for High-Temperature Operation of AlGaAs Superluminescent Diode.• Collaborated with academic partners including Nagoya University (Japan) and Nagoya Institute of Technology (Japan).