Saiful Alam Email & Phone Number

Cardiff, Wales, United Kingdom

Development of MOCVD epitaxy of GaN-based materials for wireless, power and photonics applications

Newport, Wales, United Kingdom

Cardiff, Wales, United Kingdom

Electrical and Electronic Engineering (BEng)EN2083 Digital Electronics

Cardiff, Wales, United Kingdom

Compound Semiconductor Centre (a Cardiff University and IQE plc joint venture)• Design and optimisation of growth of AlGaN/GaN-based HFET structures on 6” Si substrate by MOCVD for fabrication of HFET for high frequency application using Thomas Swan 1x6” CCS reactor • Analysis of characterisation results (Nomarsky microscopy, AFM, XRD, Hg-CV, SIMS) of the epi-wafer HFETs to adjust the epitaxial growth • Growing GaN-based epitaxial structure by MOCVD for internal and external collaborators

Metz, Grand Est, France

International Research Lab (IRL) 2958 Georgia Tech-CNRS, Metz, France• MOCVD growth of 2D hexagonal boron nitride (BN) on different substrates • MOCVD growth of III-N layer structures on top of h-BN layer for optoelectronic and electronic applications for the study of potential exfoliation and substrate transfer Teaching Assistant• HTS-2084: Technology and Society

Metz, Grand Est, France

International Research Lab (IRL) 2958 Georgia Tech-CNRS, Metz, France• Optimising growth parameters for III(Al,Ga,In)-N materials by MOCVD using two reactors: T-shape horizontal flow reactor and Aixtron CCS 3x2” reactor • Growth optimisation of AlGaN/GaN HEMT structure, BGaN materials, (In)GaN bulk materials, BAlN/Al(Ga)N DBRs for VCSEL application, InGaN/GaN MQW and PiN structures for LED and solar cell applications, AlGaN-based structures for deep UV LEDs • GaN and InGaN nanostructures (by SAG) on sapphire, Si and ZnO templates • Growing 2D h-BN on sapphire, Si and on graphene templates • Study of grown III-N materials by after growth characterisations: HRXRD, AFM, SEM and Hall measurements • Analysis of Photoluminescence (PL), Cathodoluminescence (CL), SIMS, TEM and TLM data

Metz, Grand Est, France

CEA Tech and UMI 2958 GT-CNRS joint project

Ulm, Baden-Württemberg, Germany

Institute of Optoelectronics, Ulm University• Growth of InGaN/GaN LED structure on sapphire substrate using Aixtron RF-200 MOCVD system and optimisation of green LED figure of merits. • Characterisation of on-wafer LEDs by XRD, SEM, AFM and PL, EL• Clean Room Experience: Evaporation Deposition, Plasma Enhanced Chemical Vapor Deposition, Photolithography

Dhaka, Bangladesh

Project Management Office (Technology Division)• Plan and manage Cellular Network expansion and swap projects • Coordinate among different internal and external stakeholders to meet the project timeline and deliverables

Dhaka, Bangladesh

• Design and optimise wireless communication system for cellular network

Doctor Of Philosophy - Phd, Physics

Thesis: High Indium-content InGaN/InGaN MQW-based LEDs with emission wavelength in cyan-green spectra grown on InGaN “semi-bulk” buffer

Master'S Degree, Microelectronics And Optoelectronics

Thesis: Fabrication and characterisation of InGaN/GaN-based semipolar green light-emitting diodes

Master Of Business Administration - Mba

Bachelor Of Engineering - Be, Electrical And Electronics Engineering