Saiful Alam Email & Phone Number

Cardiff, Wales, United Kingdom

Development of MOCVD epitaxy of GaN-based materials for wireless, power and photonics applications

Newport, Wales, United Kingdom

Cardiff, Wales, United Kingdom

Electrical and Electronic Engineering (BEng)EN2083 Digital Electronics

Cardiff, Wales, United Kingdom

• Compound Semiconductor Centre (a Cardiff University and IQE plc joint venture)
• Design and optimisation of growth of AlGaN/GaN-based HFET structures on 6” Si substrate by MOCVD for fabrication of HFET for high frequency application using Thomas Swan 1x6” CCS reactor
• Analysis of characterisation results (Nomarsky microscopy, AFM, XRD, Hg-CV, SIMS) of the epi-wafer HFETs to adjust the epitaxial growth
• Growing GaN-based epitaxial structure by MOCVD for internal and external collaborators

Metz, Grand Est, France

• International Research Lab (IRL) 2958 Georgia Tech-CNRS, Metz, France
• MOCVD growth of 2D hexagonal boron nitride (BN) on different substrates
• MOCVD growth of III-N layer structures on top of h-BN layer for optoelectronic and electronic applications for the study of potential exfoliation and substrate transfer Teaching Assistant
• HTS-2084: Technology and Society

Metz, Grand Est, France

• International Research Lab (IRL) 2958 Georgia Tech-CNRS, Metz, France
• Optimising growth parameters for III(Al,Ga,In)-N materials by MOCVD using two reactors: T-shape horizontal flow reactor and Aixtron CCS 3x2” reactor
• Growth optimisation of AlGaN/GaN HEMT structure, BGaN materials, (In)GaN bulk materials, BAlN/Al(Ga)N DBRs for VCSEL application, InGaN/GaN MQW and PiN structures for LED and solar cell applications, AlGaN-based.
• GaN and InGaN nanostructures (by SAG) on sapphire, Si and ZnO templates
• Growing 2D h-BN on sapphire, Si and on graphene templates
• Study of grown III-N materials by after growth characterisations: HRXRD, AFM, SEM and Hall measurements

Metz, Grand Est, France

CEA Tech and UMI 2958 GT-CNRS joint project

Ulm, Baden-Württemberg, Germany

• Institute of Optoelectronics, Ulm University
• Growth of InGaN/GaN LED structure on sapphire substrate using Aixtron RF-200 MOCVD system and optimisation of green LED figure of merits.
• Characterisation of on-wafer LEDs by XRD, SEM, AFM and PL, EL
• Clean Room Experience: Evaporation Deposition, Plasma Enhanced Chemical Vapor Deposition, Photolithography

Dhaka, Bangladesh

• Project Management Office (Technology Division)
• Plan and manage Cellular Network expansion and swap projects
• Coordinate among different internal and external stakeholders to meet the project timeline and deliverables

Dhaka, Bangladesh

• Design and optimise wireless communication system for cellular network

Doctor Of Philosophy - Phd, Physics

Thesis: High Indium-content InGaN/InGaN MQW-based LEDs with emission wavelength in cyan-green spectra grown on InGaN “semi-bulk” buffer

Master'S Degree, Microelectronics And Optoelectronics

Thesis: Fabrication and characterisation of InGaN/GaN-based semipolar green light-emitting diodes

Master Of Business Administration - Mba

Bachelor Of Engineering - Be, Electrical And Electronics Engineering