Sayantan Ghosh Email and Phone Number
Semiconductor Micro and Nanofabrication. Focussed on IC Chip Manufacturing, Semiconductor Process Integration, and 3D System Integration.
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Phd CandidateHelmholtz-Zentrum Dresden-Rossendorf (Hzdr)Dresden, Sn, De -
Phd CandidateHelmholtz-Zentrum Dresden-Rossendorf (Hzdr) Nov 2020 - PresentDresden, Saxony, Germany• Silicon Nanowire Transistors: Design, Fabrication, Characterization and Sensing Application • Junctionless Nanowire Transistor (JNT): Fundamental Breakthrough in Sensing and Detection of Atmospheric Free Radicals -
Wissenschaftlicher MitarbeiterHelmholtz-Zentrum Dresden-Rossendorf (Hzdr) May 2020 - Oct 2020Dresden, Saxony, Germany• Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing• Top-Down Fabrication and Characterization of SiGe RFET Devices• Fabrication and Characterization of Mixed Dimensional Heterostructure-Hybrid RFET Devices -
Graduate Student ResearcherHelmholtz-Zentrum Dresden-Rossendorf (Hzdr) Mar 2019 - Apr 2020Dresden, Saxony, GermanyInstitute of Ion Beam Physics and Materials Research (FWI)Department of Process Technology, Nanofabrication, and Scaling Phenomenon (FWIO-T)Master Thesis: Fabrication and Electrical Characterization of Top-Gated SiNW RFETsSupervisors: Prof. Dr.-Ing. Thomas Mikolajick and PD Dr. Habil. Artur Erbe -
Scientific ResearcherRadical Air Eu Dec 2020 - PresentDresden, Saxony, GermanyThis work focuses on the EU-funded project "RADICAL". RADICAL aims to develop a brand-new way of detecting atmospheric radicals in real-time. This will be a small, low-cost electronic sensor that will ‘sniff’ out short-lived radicals such as hydroxyl and nitrate, which play a key intermediary role in day- and night-time air quality.The project has 6 collaborations. The team at HZDR focuses on the fabrication and electrical characterization of junctionless transistors (JNT) which will be further processed by collaboration partners for sensing application. A junctionless transistor consists of a highly doped nanowire channel where the flow of carriers is controlled by the gate. For fabrication of JNTs, the intrinsic silicon-on-insulator (SOIs) are doped with ion implantation and flash lamp annealing is performed for dopant activation. The nanowires are fabricated following a top-down approach using EBL and ICP-RIE. Electrical characterization of the fabricated devices is performed by back- and top-gate architectures. -
Research StudentTechnische Universität Dresden Nov 2017 - Dec 2018Dresden, Saxony, GermanyInstitute of Semiconductor and Microsystems (IHM), TU DresdenProject Topic: Fabrication, modeling, and characterization of Optical Through Silicon Via (TSV)The following tasks were addressed in the project work: • Literature research on the subject of optical interconnects and fabrication of TSV.• Development of a fabrication process for the waveguide filling, exposure and development of optical waveguide structures (optical TSV).• Investigation, characterization, and optimization of the filling and coating process. • The evaluation of the optical characterization results to compare the performance and optical losses between the waveguide core materials SU-8 and Ormocore. -
Student Research AssistantTechnische Universität Dresden Jan 2018 - Oct 2018Dresden Area, GermanyInstitute of Electronics Packaging and Assembly Technology (IAVT-ZmP), TU DresdenPart of the research project "Warpage_ZUV" which focusses on Investigation on the Warpage Behaviour and Failure Assessment of Ball Grid Array (BGA) Components.Circuit boards and components of electronic assemblies are characterized by the construction of various materials, like metals and polymers. Their different coefficients of thermal expansion lead to deformation under thermal stress. These deformations are particularly critical for large components such as Ball Grid Array (BGA) and can lead to errors and failure during assembly. Focused on: • Failure Assessment of Ball Grid Array (BGA) Components• Monitoring temperature change experiments (Thermoire Measurements)• Surface Topographical characterization• Deformation and Bending test measurements. -
Graduate StudentWest Bengal University Of Technology, Kolkata Jan 2016 - May 2016Kolkata Area, IndiaProject Title: Automatic Solar Tracker CellObjective: To control the horizontal and vertical position of the solar plate with the help of the Light Dependent Resistor (LDR) to get the maximum output.Role: Re-modelled the design. Adjusted the value of tolerance in the programming according to the tolerance limit of the LDR. -
Internship TraineeBajaj Electricals Ltd Jun 2015 - Jul 2015Delhi Area, IndiaElectrical Equipment Manufacturing :• General Light Service (GLS)• Fluorescent Tube Light (FTL)
Sayantan Ghosh Education Details
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Nanoelectronic Systems -
Science
Frequently Asked Questions about Sayantan Ghosh
What company does Sayantan Ghosh work for?
Sayantan Ghosh works for Helmholtz-Zentrum Dresden-Rossendorf (Hzdr)
What is Sayantan Ghosh's role at the current company?
Sayantan Ghosh's current role is PhD Candidate.
What schools did Sayantan Ghosh attend?
Sayantan Ghosh attended Technische Universität Dresden, Technische Universität Dresden, West Bengal University Of Technology, Kolkata, St. James' School (Kolkata).
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