Sergey Kostylev Email and Phone Number

Researched ways of using phenomena of bulk negative differential conductivity (NDC) and electrical and thermal instabilities in solids to increase functional diversity (“More than Moore”) of unit volume of electronic and optical devices. Improved construction and technology of nanoscale cells and arrays of electronic and optic solid state switches and nonvolatile memory. Discovered new features of transient phenomena in chalcogenide switches and phase-change memory devices. Studied the role of contacts’ shapes and materials in enhancing functionality, scaling pattern and reliability in nanoscale devices. Developed new methods of testing and improving general and specific parameters of nonvolatile electronic and ionic nanoscale memoryCreated methodology and equipment for using characteristics of electrical admittance of Biologically-Active Points (BAP) as a tool for express-diagnostics of organs and systems of

Analysing new technologies and designs of energy manipulation and storage. Venture negotiations. Personnel training.

New express diagnostics through admittance characterization and interaction of electromagnetic waves (EMV) of very high frequency (VHF) and ultra low power (ULP) with living cells and arrays of cells.Technology and operation principles of THz-devices with localized development of Negative Differential Conductivity (NDC).

Accelerated development of phase change electrical memory and combination of memory devices with threshold switches; spearheaded search for new materials and multilayer structures for memory and switching applications. Initiated new processing experiments and device geometries. Accelerated collecting and analyzing characterization data. Scientifically supervised cross-functional development teams. Designed new critical experiments and methods of improving and testing general and specific parameters of devices such as speed, drift and cycle-life of memory elements and solid-state switches (including phase-change nonvolatile electronic memory and switches based on chalcogenide semiconductors). Recommended ways for resolution of issues that arise during product development. Prognosed and initiated new tests for new alloys and device structures. Invented and initiated ways of keeping the program on planned track. Presented data to potential and existing international and domestic customers and negotiated product development goals and milestones. Actively participated in personnel training for Intel, ST Microelectronics, Elpida, Samsung, Qimonda. Initiated 37 patent disclosures.

Spearheaded design, processing and characterization of high-speed multistate Ovonic Unified Memory (OUM) alloys and devices. Initiated new experiments, collected and analyzed key-data. Initiated and performed experimental verification of super fast (3 nanoseconds) OVONIC memory. Initiated experiments and run tests and consolidated data on long cycle-life (more than 3 1013 cycles). Developed and characterized new alloys and device structures with improved parameters. Designed and developed characterization procedure of devices with multi-state (16 states, 4 bits) operation. Presented data to potential customers and participated in fund-raising. Spearheaded patenting of key ideas in technology and device's structure. Accelerated negotiations to create international Joint Venture Companies on thin-film photovoltaic modules and NIMH batteries production, personnel training and starting production.