Stephanie Watts Butler, PhD, PE, is the President of WattsButler LLC, an innovation services company focused on the semiconductor and nanotechnology industries. As a Technology Innovation Architect with over 35 years of experience in silicon and wide bandgap technology and product development, Dr. Butler enables clients to innovate more efficiently, effectively, and profitably. Dr. Butler supports clients by bringing structure to nebulous situations to solve complex problems.

Identified high-impact technology opportunities that enabled Texas Instruments’ newest business unit to achieve rapid growth by assessing technology potential benefits, development costs, timelines, and risks for product roadmap, market acceptance, customer impact, competitiveness, and continuity of supply.• Technologies included 700V LBC silicon, 100-200V LBC, GaN, capacitive and magnetic based isolation, packaging; firmware. • Products included DCDC, ACDC including programable products, gate drivers for silicon and SiC. • Initiatives included creating an efficient and innovative product development approach in the global automotive market, which involved coalescing efforts across all of TI’s business divisions. • Standards work included co-founding world-wide standards activity and leading its integration into JEDEC, resulting in JC-70 committee for Wide Bandgap Power Electronic Conversion Semiconductors, JEDEC’s 3rd largest and fastest-growing committee, and founded first wide bandgap working group (WG8) in IEC (International Electrotechnical Commission); authoring JEDEC guideline JEP186.• External Research included leading TI’s largest university program portfolio focus area across the entire company which comprised individual university projects and consortia membership, including PowerAmerica and VT CPES.• Consulting (internal to TI) included serving as a subject matter expert on technology innovation, manufacturing science, and technology program management

Defined and assumed new role responsible for solving challenges associated with increasing need to develop new Analog products that simultaneously introduced new process technology and manufacturing capability, material changes, and packaging innovations, with specific focus on power management semiconductors.• Established several across-organization programs to speed time from technology inception to manufacturing release of associated products, which drove >$0.5B in revenue in first five years after release.• Led the development and release of HotRodTM QFN package technology creating smaller and more efficient products.• Managed development and release of innovative integrated power package that resulted in creation of Leadership Campaign product and new TI business sector for BQFN-based (System-in-Package) power modules. Entire development and release were 33% faster than similar competitive projects.• Served on Analog New Product Execution Steering Team, and worked to improve efficiency and effectiveness of TI’s Analog New Product Development business process for entire company

Directed investigation of process technology, coupled with design opportunities and product needs, to propose process technology definition options, design rules, equipment set, process flow, cost, risks and timeline. Included external research projects and staffing at SEMATECH and IMEC. Transitioned low power 32nm node from concept to development on-time within new outsourced R&D business model.

Led transition of R&D from 200mm into 300mm production facility. Enabled 65nm node ramp by serving as interface to fabs for ramp readiness, including explaining technology changes, analyzing equipment and chemical deltas, and championing capital. Improved final production costs (10-20% less than historical expectations), through performing financial analysis, identifying opportunities, and driving implementation. Served as process technologist on design team for new 300mm RFAB, including coordinating technical specifications of ~100 chemicals that achieved aggressive cost-containment goals.

Completed 100% of projects on time by creating business processes to identify technology gaps and create R&D projects with fabs and suppliers (equipment, metrology, and material vendors). Championed several projects from development to production: Plasma Nitrided Oxides, Ultra-Shallow Junction, Scatterometry, Next Generation sidewall equipment and structures, In-Fab XPS. Launched research projects for Next-Next Generation products, including: embedded memory technologies (FeRAM), advanced gate dielectrics (“High k”), metal gate electrodes, Next-Generation Lithography, and recessed source/drain (SiGe).

Led group of technologists to develop, apply, and transfer control and fault detection methodologies, including in situ sensor technology, to achieve outstanding yields. Directed development and application of most in-fab metrology, such as SEM, profilometry, AFM, and optical thickness. Chief domain expert for design of TI’s Advanced Process Control software, and served as application domain expert for next generation manufacturing execution system. Created and taught course to all production facilities worldwide that introduced concepts and terms of advanced process control (APC), Model Based Process Control, Fault Detection and Classification (FDC), Data Analysis, and taught how to evaluate and select appropriate control strategy. Work funded by DARPA Microelectronics Manufacturing Science & Technology (MMST) program, 1990-1993