Currently, I'm working at Maydan technology center, Applied Materials, Sunnyvale CA—developing advanced material-based process integration and technology[device(3D structures) and process(new materials, sub atomic-level precision films and tight pitch etching process)] of STT/SOT- MRAM, and hybrid memory architect for Artificial Intelligence Memory. Especially, considering my interest in Ultimate-Energy Devices to efficiently realize the energy efficient computing for Artificial Intelligence Memory applications, I am mostly interested in developing novel materials and thin film processing for Ultra-low-energy magnetization (M) switching and Phase changing for Neuromorphic computing in 3D-emerging memory.So far, I have over 15 years experience of materials synthesis/thin-film nanotechnology based device integration and modeling(TCAD and Atomistic) for Major memory leading to Non-Volatile Memory Solutions as well as research and development of II-VI(HgTe/CdTe/ZnTe-based) crystal growth and III-V(GaN/GaAs-based) compound semiconductors[i.e., X-ray, Gamma-ray detector, GaN-based power device, Quantum functional structures(Quantum dots/wires/well), GaAs-based Dilute Magnetic Semiconductor, etc.] for multifunctional photonic, spintronic, MEMS/NEMS devices using various fabrication methodologies—Transferring Heater Method (THM) for single crystal growth, Molecular Beam Epitaxy (MBE) and thermal evaporation for II-VI, Metal Organic Chemical Vapor Deposition (MOCVD) for III-V, and ALD/PVD(RF/DC magnetron sputtering) for magnetic/transition metal. My work has mainly covered from material synthesis to characterization, optimization for logic and emerging memory devices based MRAM, PC-RAM, and hybrid applications.