I serve as the Task Lead for the eMRAM Process Architecture Team in the Foundry Business at Samsung Electronics. With 16 years of experience in academic research and industry development, my expertise lies in magnetic tunnel junction (MTJ) stack engineering and device characterization for MRAM. Before joining Samsung Electronics, I accumulated substantial experience in advancing MRAM technology and introducing new MRAM products for both standalone and embedded memory. Since joining Samsung Electronics in 2021, my primary focus has been contributing to the development of non-volatile RAM (nvRAM) products using 28/14 nm technology for both standalone and embedded MRAM. Specifically, I am responsible for overseeing the yield ramp-up for the release of the Auto-G1 eMRAM product with the 14nm process and below.