Jack Chung Email & Phone Number

Milpitas, California, US

Investigating concepts on detector performance improvement for next-generation optical wafer defect inspection system

Berkeley, CA, US

• Combined material design, nanofabrication, and electronic measurement techniques to investigate the electrical and thermoelectric properties of electronic states in moiré materials.
• Performed free-space magneto-optical (MCD and MOKE) and magnetoresistance measurements to study 2D materials.
• Led operation and maintenance of a cryogen-free attoDRY platform. Designed and built a PCB sample holder with two times electrical connections for the cryostat to facilitate multiple devices measured at a time. Built.

West Lafayette, IN, US

Employed Raman and PL to characterize the optical properties of MOCVD grown III-nitride AlGaN epitaxial layer (on sapphire) with different compositions and correlated with the residual strain and threading dislocation density information determined from HRXRD, resulting in 1 publication with coworkers.

West Lafayette, IN, US

• Experienced with electrical and optical characterization, CVD/PVD, vacuum and cryogenic systems, electronic device fabrication, and 2D materials.Project: Photoelectrical and optical properties of mixed-dimensional.
• Fabricated and characterized graphene phototransistors on undoped SiC semiconducting substrates. Achieved position-sensitive photoresponse (>100 um from the graphene device) with a photoresponsivity of 10 A/W.
• Assembled and characterized 2D heterostructures consisting of graphene and WS2 (semiconductor) for photodetector and photovoltaic applications. Demonstrated broadband enhancement in photocarrier generation and Raman.
• Designed and fabricated tBLG devices to investigate the effect of rotational misalignment (leading to energy band hybridization) on their electrical properties. Conducted electrical measurements under variable.
• Developed and grew single-crystalline tBLG. Characterized the low-energy Raman modes of tBLG using 532 nm and 638 nm lasers, resulting in the discovery of new Raman peaks originating from interlayer lattice vibrations..
• Designed and fabricated electrolyte-gated transistors to control the optical and vibrational properties of tBLG. Obtained a maximum 6-fold Raman intensity modulation and a maximum of 16 wavenumbers Raman peak splitting.

West Lafayette, IN, US

• Served as a teaching assistant for several undergraduate level classes (including modern mechanics - PHYS 172, electric & magnetic interactions - PHYS 272, and general physics – PHYS 220)
• Conducted recitation sessions (< 40 students per class) for problem-solving and trained students to operate experiments and analyze experimental data

• Conducted failure analysis on flexible PCB received from customers and company production lines, resulting in 5+ reliability reports
• Interacted with process engineers to implement new procedures for improving prototype yield
• Published a IEEE conference paper about ultra-fine via pitch on flexible PCB

Kowloon Tong, Kowloon, HK

• Investigated low-dimensional II-VI semiconducting materials focusing on the selective growth of ZnO nanowires and their optical properties. Led research efforts and published 2 peer-reviewed journal papers
• Demonstrated CVD growth of well-aligned ZnO nanowire arrays on Si substrates with a selectively patterned aluminum-doped ZnO buffer layer. The buffer layer patterning was achieved by a dielectric layer (e.g. SiO2, AlN).
• Optimized the sputtering condition and the growth direction of the buffer layer. Evaluated the crystallographic properties of the buffer layer for ZnO nanowire growth using XRD
• Investigated the influence of the buffer layer on the optical and electrical properties of ZnO nanowires using SEM-CL, PL, and I-V measurements

Coordinated installation and inspection for backlight and color LCD panels

Ph.D., Condensed Matter And Materials Physics

Mphil., Nanomaterials And Nanotechnology In Dept. Of Physics And Materials Science

Bsc., Engineering Physics